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IRF7469TR

UMW · MOSFETs · SOP-8

IRF7469TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the N-channel MOSFET; pins 1, 2 and 3 share this function in the datasheet pinning table.
2 S passive SOURCE terminal of the N-channel MOSFET; pins 1, 2 and 3 share this function in the datasheet pinning table.
3 S passive SOURCE terminal of the N-channel MOSFET; pins 1, 2 and 3 share this function in the datasheet pinning table.
4 G input GATE terminal of the MOSFET; the absolute maximum gate-to-source voltage is VGS = ±20 V.
5 D passive DRAIN terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS = 40 V.
6 D passive DRAIN terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS = 40 V.
7 D passive DRAIN terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS = 40 V.
8 D passive DRAIN terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS = 40 V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9 A VGS=10V, TA=25°C 1
Continuous Drain Current ID 7.3 A VGS=10V, TA=70°C 1
Pulsed Drain Current IDM 73 A 1
Maximum Power Dissipation PD 2.5 W TA=25°C 1
Maximum Power Dissipation PD 1.6 W TA=70°C 1
Linear Derating Factor 0.02 mW/°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS 40 V ID=250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.04 V/°C ID=1mA, Reference to 25°C 3
Gate Threshold Voltage VGS(th) 1 3 V VDS=VGS, ID=250µA 3
Static Drain-to-Source On-Resistance RDS(ON) 12 17 mΩ VGS=10V, ID=9A 3
Static Drain-to-Source On-Resistance RDS(ON) 15.5 21 mΩ VGS=4.5V, ID=7.2A 3
Input Capacitance Ciss 2000 pF VGS=0V, VDS=20V, ƒ=1.0MHz 3
Output Capacitance Coss 480 pF VGS=0V, VDS=20V, ƒ=1.0MHz 3
Continuous Source Current (Body Diode) IS 2.3 A 4
Pulsed Source Current (Body Diode) ISM 73 A 4
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 2
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W When mounted on 1 inch square copper board 2

CAD (KiCad official)

  • Symbol: IRF7469TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7469tr-etched.step / irf7469tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7469tr.step / irf7469tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 52b5bf5195db1638, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF