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IRF7465TRPBF
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Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7465TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF7465TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate pin-specific limit, and the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 2 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate pin-specific limit, and the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate pin-specific limit, and the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 4 | G | input | Gate terminal; the gate-to-source voltage is rated ±30V maximum. |
| 5 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 6 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 7 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 8 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ 10V (TA = 25°C) | ID | 1.9 | A | TA = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current, VGS @ 10V (TA = 70°C) | ID | 1.5 | A | TA = 70°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 15 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TA = 25°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 7.8 | V/ns | 1 | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Soldering Temperature, for 10 seconds | 300 | °C | 1.6mm from case, 10 seconds | 1 | |||
| Junction-to-Drain Lead Thermal Resistance | RθJL | 20 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 50 | °C/W | 1 | |||
| Forward Transconductance | gfs | 0.75 | S | VDS = 50V, ID = 1.14A | 2 | ||
| Total Gate Charge | Qg | 10 | 15 | nC | ID = 1.14A | 2 | |
| Gate-to-Source Charge | Qgs | 2.7 | 4 | nC | VDS = 120V | 2 | |
| Gate-to-Drain (Miller) Charge | Qgd | 5 | 7.5 | nC | VGS = 10V | 2 | |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 150 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 0.28 | Ω | VGS = 10V, ID = 1.14A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5.5 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 25 | µA | VDS = 150V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 250 | µA | VDS = 120V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 30V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -30V | 2 | ||
| Single Pulse Avalanche Energy | EAS | 40 | mJ | 2 | |||
| Avalanche Current | IAR | 1.9 | A | 2 | |||
| Continuous Source Current (Body Diode) | IS | 2.3 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 15 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 1.14A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 62 | 93 | ns | TJ = 25°C, IF = 1.14A | 2 | |
| Reverse Recovery Charge | Qrr | 160 | 240 | nC | di/dt = 100A/µs | 2 |
CAD (KiCad official)
- Symbol:
IRF7465TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7465trpbf-etched.step/irf7465trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7465trpbf.step/irf7465trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
6a7db2925a9211b6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7465TRPBF
**Infineon Technologies** · MOSFETs · SO-8
IRF7465TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate pin-specific limit, and the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 2 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate pin-specific limit, and the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate pin-specific limit, and the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 4 | G | input | Gate terminal; the gate-to-source voltage is rated ±30V maximum. |
| 5 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 6 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 7 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
| 8 | D | passive | Drain terminal; the device is rated 150V VDSS with 1.9A continuous drain current at TA = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ 10V (TA = 25°C) | ID | | | 1.9 | A | TA = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current, VGS @ 10V (TA = 70°C) | ID | | | 1.5 | A | TA = 70°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 15 | A | | 1 |
| Power Dissipation | PD | | | 2.5 | W | TA = 25°C | 1 |
| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 7.8 | V/ns | | 1 |
| Operating Junction Temperature | TJ | -55 | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Soldering Temperature, for 10 seconds | | | | 300 | °C | 1.6mm from case, 10 seconds | 1 |
| Junction-to-Drain Lead Thermal Resistance | RθJL | | | 20 | °C/W | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | °C/W | | 1 |
| Forward Transconductance | gfs | 0.75 | | | S | VDS = 50V, ID = 1.14A | 2 |
| Total Gate Charge | Qg | | 10 | 15 | nC | ID = 1.14A | 2 |
| Gate-to-Source Charge | Qgs | | 2.7 | 4 | nC | VDS = 120V | 2 |
| Gate-to-Drain (Miller) Charge | Qgd | | 5 | 7.5 | nC | VGS = 10V | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 150 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | | 0.28 | Ω | VGS = 10V, ID = 1.14A | 2 |
| Gate Threshold Voltage | VGS(th) | 3 | | 5.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 25 | µA | VDS = 150V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | | | 250 | µA | VDS = 120V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 30V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -30V | 2 |
| Single Pulse Avalanche Energy | EAS | | | 40 | mJ | | 2 |
| Avalanche Current | IAR | | | 1.9 | A | | 2 |
| Continuous Source Current (Body Diode) | IS | | | 2.3 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 15 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 1.14A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 62 | 93 | ns | TJ = 25°C, IF = 1.14A | 2 |
| Reverse Recovery Charge | Qrr | | 160 | 240 | nC | di/dt = 100A/µs | 2 |
## CAD (KiCad official)
- Symbol: `IRF7465TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7465trpbf-etched.step` / `irf7465trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7465trpbf.step` / `irf7465trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879931963289600) (8 pp, sha256 `6a7db2925a9211b6`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7465trpbf-datasheet.pdf)