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Contents

README

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IRF7456

Cmos · MOSFETs · SOP-8

IRF7456 from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, one of three paralleled source pins in the SOP-8 pin configuration.
2 S passive Source of the N-channel MOSFET, one of three paralleled source pins in the SOP-8 pin configuration.
3 S passive Source of the N-channel MOSFET, one of three paralleled source pins in the SOP-8 pin configuration.
4 G input Gate of the N-channel MOSFET, rated VGS ±12 V maximum with RDS(ON) ≤6.5 mΩ at VGS=10 V and ≤7.5 mΩ at 4.5 V.
5 D passive Drain of the N-channel MOSFET (VDS 20 V max, ID 16 A continuous), one of four paralleled drain pins.
6 D passive Drain of the N-channel MOSFET (VDS 20 V max, ID 16 A continuous), one of four paralleled drain pins.
7 D passive Drain of the N-channel MOSFET (VDS 20 V max, ID 16 A continuous), one of four paralleled drain pins.
8 D passive Drain of the N-channel MOSFET (VDS 20 V max, ID 16 A continuous), one of four paralleled drain pins.

Key specifications

Parameter Value
Manufacturer Cmos
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 6.5 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 7.5 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 0.5 2 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 20 uA VDS=16V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A 2
Drain-Source Voltage VDS 20 V TA=25°C 1
Gate-Source Voltage VGS -12 12 V TA=25°C 1
Continuous Drain Current ID 16 A TA=25°C 1
Pulsed Drain Current IDM 130 A TA=25°C 1
Total Power Dissipation PD 2.5 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W Mounted on 1 inch square copper board, t<10 sec 1
Forward Transconductance gfs 31 S VDS=5V, ID=10A 2
Total Gate Charge Qg 38 nC VDS=16V, VGS=4.5V, ID=16A 2
Gate-Drain Charge Qgd 15 nC VDS=16V, VGS=4.5V, ID=16A 2
Turn-On Delay Time Td(on) 20 ns VDD=10V, VGS=4.5V, RG=6Ω, ID=1A 2
Rise Time Tr 27 ns VDD=10V, VGS=4.5V, RG=6Ω, ID=1A 2
Turn-Off Delay Time Td(off) 52 ns VDD=10V, VGS=4.5V, RG=6Ω, ID=1A 2
Fall Time Tf 55 ns VDD=10V, VGS=4.5V, RG=6Ω, ID=1A 2
Input Capacitance Ciss 4500 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 1500 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 320 pF VDS=15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: IRF7456
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7456-etched.step / irf7456-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7456.step / irf7456.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 8bd71f841311911e, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF