component
IRF7450TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRF7450TRPBF-VB
VBsemi Elec · MOSFETs · SO-8
IRF7450TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the 200 V N-channel MOSFET; the datasheet gives continuous source (diode conduction) current IS of 6 A. |
| 2 | S | passive | Source terminal of the 200 V N-channel MOSFET; the datasheet gives continuous source (diode conduction) current IS of 6 A. |
| 3 | S | passive | Source terminal of the 200 V N-channel MOSFET; the datasheet gives continuous source (diode conduction) current IS of 6 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 6 | A | 1 | |||
| Avalanche Current | IAS | 6 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 18 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 96 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (10 s) | RthJA | 15 | 18 | °C/W | t 10 s (surface mounted on 1in x 1in FR4 board) | 1 | |
| Junction-to-Ambient (Steady State) | RthJA | 40 | 50 | °C/W | Steady State (surface mounted on 1in x 1in FR4 board) | 1 | |
| Junction-to-Case (Drain) | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 125 °C) | IDSS | 50 | µA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 175 °C) | IDSS | 250 | µA | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 40 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance (TJ = 25 °C) | RDS(on) | 0.26 | Ω | VGS = 10 V, ID = 3 A, TJ = 25 °C | 2 | ||
| Drain-Source On-State Resistance (TJ = 175 °C) | RDS(on) | 0.33 | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance (VGS = 6 V) | RDS(on) | 0.292 | Ω | VGS = 6 V, ID = 3 A | 2 | ||
| Pulsed Current | ISM | 5 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 3 A, VGS = 0 V | 2 | |
| Source-Drain Reverse Recovery Time | trr | 180 | 250 | ns | IF = 3 A, dI/dt = 100 A/µs | 2 | |
| Rise Time | tr | 50 | 75 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 60 | 90 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
CAD (KiCad official)
- Symbol:
IRF7450TRPBF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7450trpbf-vb-etched.step/irf7450trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7450trpbf-vb.step/irf7450trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
7a96261aa70f16a9, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7450TRPBF-VB
**VBsemi Elec** · MOSFETs · SO-8
IRF7450TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the 200 V N-channel MOSFET; the datasheet gives continuous source (diode conduction) current IS of 6 A. |
| 2 | S | passive | Source terminal of the 200 V N-channel MOSFET; the datasheet gives continuous source (diode conduction) current IS of 6 A. |
| 3 | S | passive | Source terminal of the 200 V N-channel MOSFET; the datasheet gives continuous source (diode conduction) current IS of 6 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated at 200 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 3 | A | TC = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 6 | A | | 1 |
| Avalanche Current | IAS | | | 6 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 18 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 96 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient (10 s) | RthJA | | 15 | 18 | °C/W | t 10 s (surface mounted on 1in x 1in FR4 board) | 1 |
| Junction-to-Ambient (Steady State) | RthJA | | 40 | 50 | °C/W | Steady State (surface mounted on 1in x 1in FR4 board) | 1 |
| Junction-to-Case (Drain) | RthJC | | 0.85 | 1.1 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 200 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (TJ = 125 °C) | IDSS | | | 50 | µA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current (TJ = 175 °C) | IDSS | | | 250 | µA | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 40 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance (TJ = 25 °C) | RDS(on) | | | 0.26 | Ω | VGS = 10 V, ID = 3 A, TJ = 25 °C | 2 |
| Drain-Source On-State Resistance (TJ = 175 °C) | RDS(on) | | | 0.33 | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance (VGS = 6 V) | RDS(on) | | | 0.292 | Ω | VGS = 6 V, ID = 3 A | 2 |
| Pulsed Current | ISM | | | 5 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.9 | 1.5 | V | IF = 3 A, VGS = 0 V | 2 |
| Source-Drain Reverse Recovery Time | trr | | 180 | 250 | ns | IF = 3 A, dI/dt = 100 A/µs | 2 |
| Rise Time | tr | | 50 | 75 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 30 | 45 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Fall Time | tf | | 60 | 90 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
## CAD (KiCad official)
- Symbol: `IRF7450TRPBF-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7450trpbf-vb-etched.step` / `irf7450trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7450trpbf-vb.step` / `irf7450trpbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/irf7450trpbf-vb-datasheet.pdf) (7 pp, sha256 `7a96261aa70f16a9`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7450trpbf-vb-datasheet.pdf)