# IRF7433TRPBF-VB

**VBsemi Elec** · MOSFETs · SOP-8

IRF7433TRPBF-VB from VBsemi Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (VDS rating -12 V). |
| 2 | S | passive | Source of the P-channel MOSFET (VDS rating -12 V). |
| 3 | S | passive | Source of the P-channel MOSFET (VDS rating -12 V). |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±8 V. |
| 5 | D | passive | Drain of the P-channel MOSFET; continuous drain current -16 A (10 s) / -10 A (steady state) at TA = 25 °C. |
| 6 | D | passive | Drain of the P-channel MOSFET; continuous drain current -16 A (10 s) / -10 A (steady state) at TA = 25 °C. |
| 7 | D | passive | Drain of the P-channel MOSFET; continuous drain current -16 A (10 s) / -10 A (steady state) at TA = 25 °C. |
| 8 | D | passive | Drain of the P-channel MOSFET; continuous drain current -16 A (10 s) / -10 A (steady state) at TA = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -0.5 |  | -1 | V | VDS = VGS, ID = - 600 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = - 12 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = - 12 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | -30 |  |  | A | VDS = - 5 V, VGS = - 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.005 | Ω | VGS = - 4.5 V, ID = - 14 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.0065 | Ω | VGS = - 2.5 V, ID = - 13 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.01 | Ω | VGS = - 1.8 V, ID = - 12 A | 2 |
| Diode Forward Voltage | VSD |  | -0.6 | -1.1 | V | IS = - 2.7 A, VGS = 0 V | 2 |
| Rise Time | tr |  | 235 | 350 | ns | VDD = - 6 V, RL = 6 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 410 | 620 | ns | VDD = - 6 V, RL = 6 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 |
| Fall Time | tf |  | 285 | 430 | ns | VDD = - 6 V, RL = 6 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time | trr |  | 180 | 270 | ns | IF = - 2.1 A, dI/dt = 100 A/µs | 2 |
| Drain-Source Voltage | VDS |  |  | -12 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V | TA = 25 °C | 1 |
| Continuous Drain Current, 10 s | ID |  |  | -16 | A | TJ = 150 °C, TA = 25 °C, t ≤ 10 s | 1 |
| Continuous Drain Current, Steady State | ID |  |  | -10 | A | TJ = 150 °C, TA = 25 °C | 1 |
| Continuous Drain Current, 10 s | ID |  |  | -11.5 | A | TJ = 150 °C, TA = 70 °C, t ≤ 10 s | 1 |
| Continuous Drain Current, Steady State | ID |  |  | -8 | A | TJ = 150 °C, TA = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -50 | A | TA = 25 °C | 1 |
| Continuous Source Current, 10 s | IS |  |  | -2.7 | A | Diode conduction, t ≤ 10 s | 1 |
| Continuous Source Current, Steady State | IS |  |  | -1.36 | A | Diode conduction | 1 |
| Maximum Power Dissipation, 10 s | PD |  |  | 3 | W | TA = 25 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation, Steady State | PD |  |  | 1.5 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation, 10 s | PD |  |  | 1.9 | W | TA = 70 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation, Steady State | PD |  |  | 0.95 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance, 10 s | RthJA |  | 33 | 42 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 |
| Junction-to-Ambient Thermal Resistance, Steady State | RthJA |  | 70 | 84 | °C/W | Steady State, surface mounted on 1" x 1" FR4 board | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF |  | 16 | 21 | °C/W | Steady State | 1 |
| Forward Transconductance | gfs |  | 80 |  | S | VDS = - 6 V, ID = - 14 A | 2 |
| Gate Resistance | Rg |  | 3.6 |  | Ω |  | 2 |
| Gate-Source Charge | Qgs |  | 15 |  | nC | VDS = - 6 V, VGS = - 5 V, ID = - 14 A | 2 |
| Gate-Drain Charge | Qgd |  | 27.5 |  | nC | VDS = - 6 V, VGS = - 5 V, ID = - 14 A | 2 |

## CAD (KiCad official)

- Symbol: `IRF7433TRPBF-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7433trpbf-vb-etched.step` / `irf7433trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7433trpbf-vb.step` / `irf7433trpbf-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/irf7433trpbf-vb-datasheet.pdf) (6 pp, sha256 `e134f9a6ee55d057`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7433trpbf-vb-datasheet.pdf)