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Contents

README

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IRF7424TR

UMW · MOSFETs · SOP-8

IRF7424TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE.
2 S passive SOURCE terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE.
3 S passive SOURCE terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE.
4 G input GATE terminal; the gate-to-source voltage is rated at ±20 V in the absolute maximum ratings.
5 D passive DRAIN terminal of the MOSFET; the datasheet lists pins 5 through 8 together as DRAIN, with VDSS = -30 V.
6 D passive DRAIN terminal of the MOSFET; the datasheet lists pins 5 through 8 together as DRAIN, with VDSS = -30 V.
7 D passive DRAIN terminal of the MOSFET; the datasheet lists pins 5 through 8 together as DRAIN, with VDSS = -30 V.
8 D passive DRAIN terminal of the MOSFET; the datasheet lists pins 5 through 8 together as DRAIN, with VDSS = -30 V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Continuous Drain Current ID -11 A VGS=-10V, TA=25°C 1
Continuous Drain Current ID -9.3 A VGS=-10V, TA=70°C 1
Pulsed Drain Current IDM -47 A Repetitive rating; pulse width limited by max. junction temperature 1
Power Dissipation PD 2.5 W TA=25°C 1
Power Dissipation PD 1.6 W TA=70°C 1
Linear Derating Factor 20 mW/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 50 °C/W Surface mounted on 1 in square Cu board 2
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/TJ -0.019 V/°C ID=-1mA, Reference to 25°C 3
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS=VGS, ID=-250µA 3
Forward Transconductance gFS 17 S VDS=-10V, ID=-11A 3
Static Drain-to-Source On-Resistance RDS(ON) 13.5 mΩ VGS=-10V, ID=-11A 3
Static Drain-to-Source On-Resistance RDS(ON) 22 mΩ VGS=-4.5V, ID=-8.8A 3
Drain-to-Source Leakage Current IDSS -25 µA VDS=-24V, VGS=0V, TJ=70°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Continuous Source Current (Body Diode) IS -2.5 A MOSFET symbol showing the integral reverse p-n junction diode 4
Pulsed Source Current (Body Diode) ISM -47 A Repetitive rating; pulse width limited by max. junction temperature 4
Diode Forward Voltage VSD -1.2 V TJ=25°C, IS=-2.5A, VGS=0V 4

CAD (KiCad official)

  • Symbol: IRF7424TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7424tr-etched.step / irf7424tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7424tr.step / irf7424tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 a8dbe19d00eedaed, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF