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IRF7416TRPBF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7416TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF7416TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; pin mapping inferred from the SO-8 top-view figure.
2 S passive Source terminal of the P-channel MOSFET; pin mapping inferred from the SO-8 top-view figure.
3 S passive Source terminal of the P-channel MOSFET; pin mapping inferred from the SO-8 top-view figure.
4 G input Gate terminal of the P-channel MOSFET; VGS limit is ±20 V per the absolute maximum ratings.
5 D passive Drain terminal of the P-channel MOSFET, rated -30 V VDS; pin mapping inferred from the SO-8 top-view figure.
6 D passive Drain terminal of the P-channel MOSFET, rated -30 V VDS; pin mapping inferred from the SO-8 top-view figure.
7 D passive Drain terminal of the P-channel MOSFET, rated -30 V VDS; pin mapping inferred from the SO-8 top-view figure.
8 D passive Drain terminal of the P-channel MOSFET, rated -30 V VDS; pin mapping inferred from the SO-8 top-view figure.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -9 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -7.2 A TC = 70 °C 1
Continuous Drain Current ID -7 A TA = 25 °C, notes a, b 1
Continuous Drain Current ID -5.6 A TA = 70 °C, notes a, b 1
Pulsed Drain Current IDM -30 A 1
Continuous Source-Drain Diode Current IS -3.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.1 A TA = 25 °C, notes a, b 1
Maximum Power Dissipation PD 4.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2.7 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C, notes a, b 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C, notes a, b 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W t ≤ 10 s, notes a, c 1
Maximum Junction-to-Ambient (steady state) RthJA 95 °C/W Steady state, per note c 1
Maximum Junction-to-Foot (steady state) RthJF 24 30 °C/W Steady state 1
Drain-Source Breakdown Voltage -30 V VGS = 0 V, ID = -250 µA 2
VDS Temperature Coefficient ΔVDS/TJ -31 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.024 Ω VGS = -4.5 V, ID = -5.6 A 2
Gate Resistance Rg 0.4 2 4 Ω f = 1 MHz 2
Continuous Source-Drain Diode Current IS -6.5 A TC = 25 °C 2
Pulse Diode Forward Current ISM -30 A 2
Body Diode Voltage VSD -0.71 -1.2 V IS = -5.6 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 22 33 ns IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 17 26 nC IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time (VGEN = -10 V) td(on) 10 20 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time (VGEN = -10 V) tr 13 20 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = -10 V) td(off) 23 35 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time (VGEN = -10 V) tf 9 18 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = -4.5 V) td(on) 38 57 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = -4.5 V) tr 89 134 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = -4.5 V) td(off) 22 33 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = -4.5 V) tf 11 17 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Total Gate Charge (VGS = -10 V) Qg 25 38 nC VDS = -15 V, VGS = -10 V, ID = -7.0 A 2
Total Gate Charge (VGS = -4.5 V) Qg 13 20 nC VDS = -15 V, VGS = -4.5 V, ID = -7.0 A 2
Input Capacitance Ciss 455 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 180 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 145 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 3.5 nC 2
Gate-Drain Charge Qgd 5.5 nC 2
Forward Transconductance gfs 18 S VDS = -15 V, ID = -7.0 A 2
Reverse Recovery Fall Time ta 13 ns 2
Reverse Recovery Rise Time tb 9 ns 2

CAD (KiCad official)

  • Symbol: IRF7416TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7416trpbf-vb-etched.step / irf7416trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7416trpbf-vb.step / irf7416trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 b27cf4cf20d7860b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF