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Ray Publish 0.1.0 5a9731b 4h ago

IRF7416T

XBLW · MOSFETs · SOP-8

IRF7416T from XBLW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, shown as one of three S pins on the SOP-8 view, with VDS rated at -30V.
2 S passive Source of the P-channel MOSFET, shown as one of three S pins on the SOP-8 view, with continuous drain current rated at -11A at TA=25℃.
3 S passive Source of the P-channel MOSFET, shown as one of three S pins on the SOP-8 view, with pulsed drain current rated at -40A.
4 G input Gate of the P-channel MOSFET, with gate-source voltage rated at ±20V and threshold voltage VGS(th) of -1.0V min to -2.5V max at ID=-250μA.
5 D passive Drain of the P-channel MOSFET, shown as one of four D pins on the SOP-8 view, with VDS rated at -30V.
6 D passive Drain of the P-channel MOSFET, shown as one of four D pins on the SOP-8 view, with continuous drain current rated at -11A at TA=25℃.
7 D passive Drain of the P-channel MOSFET, shown as one of four D pins on the SOP-8 view, with RDS(on) of 13mΩ typ and 16mΩ max at VGS=-10V, ID=-10A.
8 D passive Drain of the P-channel MOSFET, shown as one of four D pins on the SOP-8 view, with pulsed drain current rated at -40A.

Key specifications

Parameter Value
Manufacturer XBLW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current (continuous) ID -11 A ID@TA=25℃, VGS @ 10V 2
Pulsed Drain Current IDM -40 A 2
Total Power Dissipation PD 3.7 W TA=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Maximum Thermal Resistance, Junction-ambient Rthj-a 33.8 ℃/W Junction-ambient, Note 3 2
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30V, VGS=0V 3
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 3
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID= -250μA 3
Static Drain-Source on-Resistance RDS(on) 13 16 mΩ VGS= -10V, ID= -10A 3
Static Drain-Source on-Resistance RDS(on) 18 27 mΩ VGS= -4.5V, ID= -5A 3
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -15A 3
Maximum Continuous Drain to Source Diode Forward Current IS -11 A 3
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 3

CAD (KiCad official)

  • Symbol: IRF7416T
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7416t-etched.step / irf7416t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7416t.step / irf7416t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XBLW datasheet (8 pp, sha256 180c0da06534505c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF