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IRF740APBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IRF740APBF

Vishay Intertech · MOSFETs · TO-220AB

IRF740APBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet rates gate-source voltage VGS at ±30 V and gate threshold VGS(th) at 2.0 V to 4.0 V at ID = 250 µA.
2 D passive Drain terminal; the datasheet rates drain-source voltage VDS at 400 V and continuous drain current ID at 10 A (TC = 25 °C).
3 S passive Source terminal; the datasheet gives continuous source-drain diode current IS of 10 A and pulsed diode forward current ISM of 40 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 400 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 10 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 6.3 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 40 A Repetitive rating, see note a 1
Maximum Power Dissipation PD 125 W TC = 25 °C 1
Single Pulse Avalanche Energy EAS 630 mJ Note b: VDD = 50 V, starting TJ = 25 °C, L = 12.6 mH, IAS = 10 A 1
Repetitive Avalanche Current IAR 10 A 1
Repetitive Avalanche Energy EAR 12.5 mJ 1
Peak Diode Recovery dV/dt dV/dt 5.9 V/ns See note c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C For 10 s, 1.6 mm from case (note d) 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Mounting Torque 1.1 N · m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Drain-Source Breakdown Voltage VDS 400 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 400 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 320 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.55 Ω VGS = 10 V, ID = 6.0 A (note b) 2
Forward Transconductance gfs 4.9 S VDS = 50 V, ID = 6.0 A (note b) 2
Total Gate Charge Qg 36 nC VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13b 2
Gate-Source Charge Qgs 9.9 nC VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13b 2
Gate-Drain Charge Qgd 16 nC VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13b 2
Body Diode Reverse Recovery Time trr 240 360 ns TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs (note b) 2
Body Diode Reverse Recovery Charge Qrr 1.9 2.9 μC TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs (note b) 2
Continuous Source-Drain Diode Current IS 10 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 40 A Note a 2
Body Diode Voltage VSD 2 V TJ = 25 °C, IS = 10 A, VGS = 0 V (note b) 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Linear Derating Factor 1 W/°C 1
VDS Temperature Coefficient VDS/TJ 0.48 V/°C Reference to 25 °C, ID = 1 mA 2
Input Capacitance Ciss 1030 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 2
Output Capacitance Coss 170 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 2
Reverse Transfer Capacitance Crss 7.7 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 2
Output Capacitance Coss 1490 pF VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz 2
Output Capacitance Coss 52 pF VGS = 0 V, VDS = 320 V, f = 1.0 MHz 2
Effective Output Capacitance Coss 61 pF VGS = 0 V, VDS = 0 V to 320 V 2
Turn-On Delay Time td(on) 10 ns VDD = 200 V, ID = 10 A, Rg = 10, RD = 19.5, see fig. 10b 2
Rise Time tr 35 ns VDD = 200 V, ID = 10 A, Rg = 10, RD = 19.5, see fig. 10b 2
Turn-Off Delay Time td(off) 24 ns VDD = 200 V, ID = 10 A, Rg = 10, RD = 19.5, see fig. 10b 2
Fall Time tf 22 ns VDD = 200 V, ID = 10 A, Rg = 10, RD = 19.5, see fig. 10b 2

CAD (KiCad official)

  • Symbol: IRF740APBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf740apbf-etched.step / irf740apbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf740apbf.step / irf740apbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 c11e849cf8832741, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF