component
IRF7406PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7406PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7406PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, serving as the reference for VGS and the source side of the VDS = -30 V rating. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, serving as the reference for VGS and the source side of the VDS = -30 V rating. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, serving as the reference for VGS and the source side of the VDS = -30 V rating. |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with Gate-Source Voltage rated +20 V and operation with gate voltages as low as 2.5 V stated. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current, VGS @ 10V | ID@TA=25℃ | -9 | A | TA=25℃ | 1 | ||
| Drain Current, VGS @ 10V | ID@TA=70℃ | -7.3 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2.5 | W | TA=25℃ | 1 | ||
| Linear Derating Factor | 0.02 | W/℃ | 1 | ||||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 50 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board, t<10sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 20 | mΩ | VGS=-10V, ID=-7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 36 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 2 | |
| Forward Transconductance | gfs | 16 | S | VDS=-10V, ID=-7A | 2 | ||
| Drain-Source Leakage Current | IDSS | -30 | uA | VDS=-24V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 18 | 29 | nC | ID=-7A, VDS=-24V, VGS=-4.5V | 2 | |
| Gate-Source Charge | Qgs | 3 | nC | 2 | |||
| Gate-Drain (Miller) Charge | Qgd | 10 | nC | 2 | |||
| Turn-on Delay Time | td(on) | 8 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Rise Time | tr | 6.6 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Turn-off Delay Time | td(off) | 44 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Fall Time | tf | 34 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Input Capacitance | Ciss | 1175 | 1690 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 | |
| Output Capacitance | Coss | 195 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 190 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 | ||
| Forward On Voltage | VSD | -1.2 | V | IS=-2.1A, VGS=0V | 2 | ||
| Reverse Recovery Time | trr | 28 | ns | IS=-7A, VGS=0V, dI/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 18 | nC | IS=-7A, VGS=0V, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
IRF7406PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7406pbf-hxy-etched.step/irf7406pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7406pbf-hxy.step/irf7406pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
1e601d9282223cee, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7406PBF-HXY
**HXY MOSFET** · MOSFETs · SOP-8
IRF7406PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, serving as the reference for VGS and the source side of the VDS = -30 V rating. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, serving as the reference for VGS and the source side of the VDS = -30 V rating. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, serving as the reference for VGS and the source side of the VDS = -30 V rating. |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with Gate-Source Voltage rated +20 V and operation with gate voltages as low as 2.5 V stated. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, with Drain-Source Voltage rated -30 V and continuous drain current ID = -9 A at TA = 25 ℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current, VGS @ 10V | ID@TA=25℃ | | | -9 | A | TA=25℃ | 1 |
| Drain Current, VGS @ 10V | ID@TA=70℃ | | | -7.3 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | -50 | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 2.5 | W | TA=25℃ | 1 |
| Linear Derating Factor | | | | 0.02 | W/℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 50 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board, t<10sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 18 | 20 | mΩ | VGS=-10V, ID=-7A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 32 | 36 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250uA | 2 |
| Forward Transconductance | gfs | | 16 | | S | VDS=-10V, ID=-7A | 2 |
| Drain-Source Leakage Current | IDSS | | | -30 | uA | VDS=-24V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 18 | 29 | nC | ID=-7A, VDS=-24V, VGS=-4.5V | 2 |
| Gate-Source Charge | Qgs | | 3 | | nC | | 2 |
| Gate-Drain (Miller) Charge | Qgd | | 10 | | nC | | 2 |
| Turn-on Delay Time | td(on) | | 8 | | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 |
| Rise Time | tr | | 6.6 | | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 |
| Turn-off Delay Time | td(off) | | 44 | | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 |
| Fall Time | tf | | 34 | | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 |
| Input Capacitance | Ciss | | 1175 | 1690 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 195 | | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 190 | | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 |
| Forward On Voltage | VSD | | | -1.2 | V | IS=-2.1A, VGS=0V | 2 |
| Reverse Recovery Time | trr | | 28 | | ns | IS=-7A, VGS=0V, dI/dt=100A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 18 | | nC | IS=-7A, VGS=0V, dI/dt=100A/µs | 2 |
## CAD (KiCad official)
- Symbol: `IRF7406PBF-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7406pbf-hxy-etched.step` / `irf7406pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7406pbf-hxy.step` / `irf7406pbf-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/irf7406pbf-hxy-datasheet.pdf) (6 pp, sha256 `1e601d9282223cee`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7406pbf-hxy-datasheet.pdf)