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IRF7404PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7404PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7404PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together; VDS rating is -20V. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together; VDS rating is -20V. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together; VDS rating is -20V. |
| 4 | G | input | Gate of the P-channel MOSFET; absolute maximum VGS is +12V, threshold VGS(th) -0.4 to -1.0V at ID=-250uA. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; ID is -20A at TA=25°C. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; ID is -20A at TA=25°C. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; ID is -20A at TA=25°C. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together; ID is -20A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | Tc=25°C | 1 | ||
| Gate-Source Voltage | VGS | 12 | V | printed +12 | 1 | ||
| Drain Current | ID@TA=25°C | -20 | A | VGS @ 10V | 1 | ||
| Drain Current | ID@TA=70°C | -16 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -68 | A | 1 | |||
| Total Power Dissipation | PD@TA=25°C | 18 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 75 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 19 | mΩ | VGS=-4.5V, ID=-10A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 23 | mΩ | VGS=-2.5V, ID=-8A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-15V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12 V, VDS=0V | 2 | |
| Continuous Source Current | IS | -20 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.012 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 2.94 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 43 | S | VDS=-5V, ID=-10A | 2 | ||
| Total Gate Charge | Qg | 35 | nC | VDS=-10V, VGS=-4.5V, ID=-10A | 2 | ||
| Gate-Source Charge | Qgs | 5 | nC | VDS=-10V, VGS=-4.5V, ID=-10A | 2 | ||
| Gate-Drain Charge | Qgd | 10 | nC | VDS=-10V, VGS=-4.5V, ID=-10A | 2 | ||
| Turn-On Delay Time | Td(on) | 12 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-10A | 2 | ||
| Rise Time | Tr | 40 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-10A | 2 | ||
| Turn-Off Delay Time | Td(off) | 30 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-10A | 2 | ||
| Input Capacitance | Ciss | 2800 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 690 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 590 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 27 | nS | IF=-10A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 17.8 | nC | IF=-10A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
IRF7404PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7404pbf-hxy-etched.step/irf7404pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7404pbf-hxy.step/irf7404pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
25a28da4a78dc1c3, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).