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Contents

README

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IRF7403TR

UMW · MOSFETs · SOP-8

IRF7403TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are all listed as SOURCE in the pinning table).
2 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are all listed as SOURCE in the pinning table).
3 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are all listed as SOURCE in the pinning table).
4 G input GATE terminal; the datasheet rates gate-to-source voltage VGS at ±20 V.
5 D passive DRAIN terminal (pins 5, 6, 7 and 8 are all listed as DRAIN in the pinning table); drain-source breakdown voltage V(BR)DSS is 30 V.
6 D passive DRAIN terminal (pins 5, 6, 7 and 8 are all listed as DRAIN in the pinning table); drain-source breakdown voltage V(BR)DSS is 30 V.
7 D passive DRAIN terminal (pins 5, 6, 7 and 8 are all listed as DRAIN in the pinning table); drain-source breakdown voltage V(BR)DSS is 30 V.
8 D passive DRAIN terminal (pins 5, 6, 7 and 8 are all listed as DRAIN in the pinning table); drain-source breakdown voltage V(BR)DSS is 30 V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1 V VDS=VGS, ID=250µA 3
Forward Transconductance gFS 8.4 S VDS=15V, ID=4A 3
Static Drain-to-Source On-Resistance RDS(ON) 0.022 Ω VGS=10V, ID=4A 3
Static Drain-to-Source On-Resistance RDS(ON) 0.035 Ω VGS=4.5V, ID=3.4A 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 25 µA VDS=24V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Continuous Source Current (Body Diode) IS 3.1 A 4
Pulsed Source Current (Body Diode) ISM 34 A 4
Diode Forward Voltage VSD 1 V TJ=25°C, IS=2A, VGS=0V 4
Reverse Recovery Time trr 52 78 ns TJ=25°C, IF=4A, dI/dt=100A/μs 4
Reverse Recovery Charge Qrr 93 140 nC TJ=25°C, IF=4A, dI/dt=100A/μs 4
Continuous Drain Current (10 sec) ID 9.7 A 10 sec, VGS=10V, TA=25°C 1
Continuous Drain Current ID 8.5 A VGS=10V, TA=25°C 1
Continuous Drain Current ID 5.4 A VGS=10V, TA=70°C 1
Pulsed Drain Current IDM 34 A TA=25°C 1
Power Dissipation PD 2.5 W TA=25°C 1
Linear Derating Factor 0.02 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 50 °C/W Surface mounted on FR-4 board, t ≤ 10 sec 2

CAD (KiCad official)

  • Symbol: IRF7403TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7403tr-etched.step / irf7403tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7403tr.step / irf7403tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 691f836c39c319c0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF