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IRF7401TRPBF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf7401trpbf-vbfactory-2.0.0extractor-text

Verified IRF7401TRPBF-VB

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IRF7401TRPBF-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-_t3p9vxt/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ irf7401trpbf-vb.kicad_sym✓ irf7401trpbf-vb.kicad_mod✓ irf7401trpbf-vb.step
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Ray Publish 0.1.0 82987aa 2d ago

IRF7401TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF7401TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current IS is 2.7 A at TC = 25 °C.
2 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current IS is 2.7 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current IS is 2.7 A at TC = 25 °C.
4 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V.
5 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V.
6 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V.
7 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V.
8 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 6.8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 5 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 6.5 A TA = 25 °C (note b, c) 1
Continuous Drain Current ID 4.9 A TA = 70 °C (note b, c) 1
Pulsed Drain Current IDM 30 A 1
Continuous Source-Drain Diode Current IS 2.7 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.7 A TA = 25 °C (note b, c) 1
Maximum Power Dissipation PD 4.1 W TC = 25 °C 1
Maximum Power Dissipation PD 2.6 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C (note b, c) 1
Maximum Power Dissipation PD 1.25 W TA = 70 °C (note b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 45 62.5 °C/W t ≤ 5 s (note b, d) 1
Maximum Junction-to-Ambient, steady state RthJA 110 °C/W Steady State (value given in note d) 1
Maximum Junction-to-Foot RthJF 25 30 °C/W Steady State 1
Drain-Source Breakdown Voltage 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.016 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance RDS(on) 0.029 Ω VGS = 4.5 V, ID = 4 A 2
Forward Transconductance gfs 24 S VDS = 10 V, ID = 5 A 2
Input Capacitance Ciss 1295 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 170 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 72 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 21.8 33 nC VDS = 15 V, VGS = 10 V, ID = 5 A 2
Total Gate Charge Qg 9.2 14 nC VDS = 15 V, VGS = 4.5 V, ID = 5 A 2
Gate-Source Charge Qgs 3.8 nC 2
Gate-Drain Charge Qgd 2.5 nC 2
Gate Resistance Rg 2.4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 21 40 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 14 25 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 40 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 10 20 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 8 16 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 21 35 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.7 A TC = 25 °C 2
Pulse Diode Forward Current ISM 30 A 2
Body Diode Voltage VSD 0.77 1.2 V IS = 1.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 21 40 ns IF = 3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 15 30 nC IF = 3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 13 ns 2
Reverse Recovery Rise Time tb 8 ns 2
Drain-Source Breakdown Voltage Temperature Coefficient ΔVDS/TJ 33 mV/°C ID = 250 µA 2
Gate-Source Threshold Voltage Temperature Coefficient ΔVGS(th)/TJ -6.2 2

CAD (KiCad official)

  • Symbol: IRF7401TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7401trpbf-vb-etched.step / irf7401trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7401trpbf-vb.step / irf7401trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 fca247fe313255bb, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF