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Ray Publish 0.1.0 858a75a 4h ago

IRF7401TR

UMW · MOSFETs · SOP-8

IRF7401TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; pins 1, 2 and 3 are common source, rated with the device VDS of 20 V maximum and continuous ID of 8.7 A at TA=25°C.
2 S passive Source terminal of the N-channel MOSFET; pins 1, 2 and 3 are common source, rated with the device VDS of 20 V maximum and continuous ID of 8.7 A at TA=25°C.
3 S passive Source terminal of the N-channel MOSFET; pins 1, 2 and 3 are common source, rated with the device VDS of 20 V maximum and continuous ID of 8.7 A at TA=25°C.
4 G input Gate terminal of the MOSFET; gate-to-source voltage is rated ±12 V maximum (VGS), with RDS(on) below 22 mΩ at VGS=4.5 V.
5 D passive Drain terminal of the N-channel MOSFET; pins 5 through 8 are common drain, rated VDS 20 V with continuous drain current 8.7 A at TA=25°C (7 A at TA=70°C).
6 D passive Drain terminal of the N-channel MOSFET; pins 5 through 8 are common drain, rated VDS 20 V with continuous drain current 8.7 A at TA=25°C (7 A at TA=70°C).
7 D passive Drain terminal of the N-channel MOSFET; pins 5 through 8 are common drain, rated VDS 20 V with continuous drain current 8.7 A at TA=25°C (7 A at TA=70°C).
8 D passive Drain terminal of the N-channel MOSFET; pins 5 through 8 are common drain, rated VDS 20 V with continuous drain current 8.7 A at TA=25°C (7 A at TA=70°C).

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V 2
Gate Threshold Voltage VGS(th) 0.7 V VDS=VGS, ID=250μA 2
Static Drain-to-Source On-Resistance RDS(ON) 22 mΩ VGS=4.5V 1
Drain-to-Source Leakage Current IDSS 1 µA VDS=16V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 25 µA VDS=16V,VGS=0V,TJ=125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=12V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-12V 2
Continuous Drain Current ID 8.7 A TA=25°C 1
Continuous Drain Current ID 7 A TA=70°C 1
10 Sec. Pulsed Drain Current 10 A VGS=4.5V 1
Pulsed Drain Current IDM 35 A TA=25°C 1
Power Dissipation PD 2.5 W TA=25°C 1
Gate-to-Source Voltage VGS -12 12 V 1
Peak Diode Recovery dv/dt dv/dt 5 V/nS 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 62.5 °C/W Surface mounted on FR-4 board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: IRF7401TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7401tr-etched.step / irf7401tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7401tr.step / irf7401tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 32d79880007050f3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF