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IRF740-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF740-HXY

HXY MOSFET · MOSFETs · TO-220

IRF740-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage rated at +/-30 V maximum, with threshold VGS(TH) of 2.0 to 4.0 V.
2 D passive Drain of the N-channel MOSFET; VDS 420 V maximum, continuous drain current 11 A at TC=25C, pulsed 44 A.
3 S passive Source of the N-channel MOSFET, connected to the body diode anode and typically the return/ground side of the switched load.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 420 V Tj=25°C 1
Gate-Source Voltage VGS 30 V Tj=25°C; printed +30 1
Drain Current ID 11 A TC=25℃, VGS @ 4.5V 1
Pulsed Drain Current IDM 44 A 1
Total Power Dissipation PD 87 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 420 V VGS=0V, ID=250μA 2
Drain-Source Leakage Current IDSS 1 µA VDS=650V, VGS=0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VG=30V, VDS=0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 2
Static Drain-Source On-State Resistance RDS(ON) 0.36 0.5 Ω VGS=10V, ID=1A 2
Input Capacitance CISS 1368 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Output Capacitance COSS 90.3 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Reverse Transfer Capacitance CRSS 3 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Turn-On Delay Time tD(ON) 16 ns VDD=250V, ID=10A, RG=25Ω 2
Turn-On Rise Time tR 25 ns VDD=250V, ID=10A, RG=25Ω 2
Turn-Off Delay Time tD(OFF) 40 ns VDD=250V, ID=10A, RG=25Ω 2
Turn-Off Fall Time tF 29 ns VDD=250V, ID=10A, RG=25Ω 2
Total Gate Charge QG 8.1 nC VDS=480V, ID=12A, VGS=10V 2
Gate-Source Charge QGS 7.4 nC VDS=480V, ID=12A, VGS=10V 2
Gate-Drain Charge QGD 5 nC VDS=480V, ID=12A, VGS=10V 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0 V, IS = 11A 2
Maximum Continuous Drain-Source Diode Forward Current IS 11 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 44 A 2
Reverse Recovery Time trr 435 ns VGS=0V, IS=12A, dIF/dt=100 A/μs 2
Reverse Recovery Charge QRR 4 μC VGS=0V, IS=12A, dIF/dt=100 A/μs 2

CAD (KiCad official)

  • Symbol: IRF740-HXY
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irf740-hxy-etched.step / irf740-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf740-hxy.step / irf740-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 e2d41df80ab25028, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF