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IRF7389TRPBF

Infineon Technologies · MOSFETs · SO-8

IRF7389TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30V, 0.029 ohm RDS(on) max at VGS=10V).
2 G1 input Gate of the N-channel MOSFET, rated ±20V VGS maximum.
3 S2 passive Source of the P-channel MOSFET (-30V, 0.058 ohm RDS(on) max at VGS=-10V).
4 G2 input Gate of the P-channel MOSFET, rated ±20V VGS maximum.
5 D2 passive Drain of the P-channel MOSFET, tied with pin 6; the -30V VDS device with -5.3A continuous drain current at TA=25°C.
6 D2 passive Drain of the P-channel MOSFET, tied with pin 5.
7 D1 passive Drain of the N-channel MOSFET, tied with pin 8; the 30V VDS device with 7.3A continuous drain current at TA=25°C.
8 D1 passive Drain of the N-channel MOSFET, tied with pin 7.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

CAD (KiCad official)

  • Symbol: IRF7389TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7389trpbf-etched.step / irf7389trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7389trpbf.step / irf7389trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 bd0da72fcaafc89e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF