component
IRF7389TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownIRF7389TRPBF-VB
VBsemi Elec · MOSFETs · SO-8
IRF7389TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated for 30 V VDS and 8 A continuous drain current at TC = 25 °C. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with a maximum gate-source voltage of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated for -30 V VDS and -8 A continuous drain current at TC = 25 °C. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with a maximum gate-source voltage of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 6, with a pulsed drain current of -40 A (10 µs). |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 5, with a pulsed drain current of -40 A (10 µs). |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 8, with a pulsed drain current of 40 A (10 µs). |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 7, with a pulsed drain current of 40 A (10 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-ch | VDS | 30 | V | N-Channel, TA = 25 °C | 1 | ||
| Drain-Source Voltage P-ch | VDS | -30 | V | P-Channel, TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | both channels | 1 | |
| Continuous Drain Current N-ch | ID | 8 | A | N-Channel, TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| Continuous Drain Current P-ch | ID | -8 | A | P-Channel, TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| Continuous Drain Current N-ch | ID | 6.8 | A | N-Channel, TC = 70 °C | 1 | ||
| Continuous Drain Current P-ch | ID | -6.8 | A | P-Channel, TC = 70 °C | 1 | ||
| Continuous Drain Current P-ch | ID | -6.6 | A | P-Channel, TA = 25 °C, t = 10 s | 1 | ||
| Pulsed Drain Current N-ch | IDM | 40 | A | N-Channel, 10 µs pulse width | 1 | ||
| Pulsed Drain Current P-ch | IDM | -40 | A | P-Channel, 10 µs pulse width | 1 | ||
| Source-Drain Diode Current | IS | 2.6 | A | N-Channel, TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current N-ch | IAS | 10 | A | N-Channel, L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current P-ch | IAS | 20 | A | P-Channel, L = 0.1 mH | 1 | ||
| Maximum Power Dissipation N-ch | PD | 3.1 | W | N-Channel, TC = 25 °C | 1 | ||
| Maximum Power Dissipation P-ch | PD | 3.2 | W | P-Channel, TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | both channels, TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance N-ch | RthJA | 50 | 62.5 | °C/W | N-Channel, t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance P-ch | RthJA | 47 | 62.5 | °C/W | P-Channel, t ≤ 10 s | 1 | |
| Junction-to-Foot Thermal Resistance N-ch | RthJF | 30 | 40 | °C/W | N-Channel, steady state | 1 | |
| Junction-to-Foot Thermal Resistance P-ch | RthJF | 29 | 38 | °C/W | P-Channel, steady state | 1 | |
| Drain-Source Breakdown Voltage P-ch | VDS | -30 | V | VGS = 0 V, ID = -250 µA, P-Ch | 2 | ||
| Gate Threshold Voltage N-ch | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA, N-Ch | 2 | |
| Gate Threshold Voltage P-ch | VGS(th) | -1 | -2 | V | VDS = VGS, ID = -250 µA, P-Ch | 2 | |
| Gate-Body Leakage N-ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, N-Ch | 2 | |
| Gate-Body Leakage P-ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, P-Ch | 2 | |
| Zero Gate Voltage Drain Current N-ch | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-ch | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current N-ch | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-ch | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C, P-Ch | 2 | ||
| On-State Drain Current N-ch | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V, N-Ch | 2 | ||
| On-State Drain Current P-ch | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V, P-Ch | 2 | ||
| Drain-Source On-State Resistance N-ch | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A, N-Ch | 2 | ||
| Drain-Source On-State Resistance N-ch | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A, N-Ch | 2 | ||
| Drain-Source On-State Resistance P-ch | RDS(on) | 0.04 | Ω | VGS = -10 V, ID = -8 A, P-Ch | 2 | ||
| Drain-Source On-State Resistance P-ch | RDS(on) | 0.044 | Ω | VGS = -8 V, ID = -6.5 A, P-Ch | 2 | ||
| Drain-Source On-State Resistance P-ch | RDS(on) | 0.05 | Ω | VGS = -4.5 V, ID = -5 A, P-Ch | 2 | ||
| Forward Transconductance N-ch | gfs | 27 | S | VDS = 15 V, ID = 6.8 A, N-Ch | 2 | ||
| Forward Transconductance P-ch | gfs | 25 | S | VDS = -15 V, ID = -6.7 A, P-Ch | 2 | ||
| Total Gate Charge P-ch | Qg | 41.5 | 63 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A, P-Ch | 2 | |
| Gate Resistance N-ch | Rg | 0.3 | 1 | 2.3 | Ω | f = 1 MHz, N-Ch | 2 |
| Gate Resistance P-ch | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz, P-Ch | 2 |
| Turn-On Delay Time P-ch | td(on) | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 | |
| Rise Time P-ch | tr | 9 | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 | |
| Fall Time P-ch | tf | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 | |
| Body Diode Voltage N-ch | VSD | 0.81 | 1.2 | V | IS = 5.4 A, N-Ch | 3 | |
| Body Diode Voltage P-ch | VSD | -0.77 | -1.2 | V | IS = -2 A, P-Ch | 3 | |
| Body Diode Reverse Recovery Time P-ch | trr | 31 | 57 | ns | IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Ch | 3 | |
| Body Diode Reverse Recovery Charge P-ch | Qrr | 29 | 47 | nC | IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Ch | 3 |
CAD (KiCad official)
- Symbol:
IRF7389TRPBF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7389trpbf-vb-etched.step/irf7389trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7389trpbf-vb.step/irf7389trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
ec4e7af7251ad7b1, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).