# IRF7379TRPBF-VB

**VBsemi Elec** · MOSFETs · SO-8

IRF7379TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30 V, 0.018 Ω at VGS = 10 V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30 V, 0.040 Ω at VGS = -10 V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, rated for VDS of -30 V and pulsed drain current IDM of -40 A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, rated for VDS of 30 V and pulsed drain current IDM of 40 A. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch) | VDS |  |  | 30 | V | TA = 25 °C, N-channel | 1 |
| Drain-Source Voltage (P-ch) | VDS | -30 |  |  | V | TA = 25 °C, P-channel | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | both channels | 1 |
| Continuous Drain Current (N-ch) | ID |  |  | 8 | A | TJ = 150 °C, TC = 25 °C, N-channel, package limited | 1 |
| Continuous Drain Current (P-ch) | ID | -8 |  |  | A | TJ = 150 °C, TC = 25 °C, P-channel, package limited | 1 |
| Pulsed Drain Current (N-ch) | IDM |  |  | 40 | A | 10 µs pulse width, N-channel | 1 |
| Pulsed Drain Current (P-ch) | IDM | -40 |  |  | A | 10 µs pulse width, P-channel | 1 |
| Source-Drain Diode Current | IS |  |  | 2.6 | A | TC = 25 °C, N-channel (P-channel -2.6) | 1 |
| Maximum Power Dissipation | PD |  |  | 2 | W | TA = 25 °C, both channels | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance (N-ch) | RthJA |  | 50 | 62.5 | °C/W | t ≤ 10 s, N-channel | 1 |
| Junction-to-Ambient Thermal Resistance (P-ch) | RthJA |  | 47 | 62.5 | °C/W | t ≤ 10 s, P-channel | 1 |
| Junction-to-Foot Thermal Resistance (N-ch) | RthJF |  | 30 | 40 | °C/W | Steady state, N-channel | 1 |
| Junction-to-Foot Thermal Resistance (P-ch) | RthJF |  | 29 | 38 | °C/W | Steady state, P-channel | 1 |
| Drain-Source Breakdown Voltage (N-ch) | VDS | 30 |  |  | V | VGS = 0 V, ID = 250 µA, N-channel | 2 |
| Drain-Source Breakdown Voltage (P-ch) | VDS | -30 |  |  | V | VGS = 0 V, ID = -250 µA, P-channel | 2 |
| Gate Threshold Voltage (N-ch) | VGS(th) | 1 |  | 2 | V | VDS = VGS, ID = 250 µA, N-channel | 2 |
| Gate Threshold Voltage (P-ch) | VGS(th) | -2 |  | -1 | V | VDS = VGS, ID = -250 µA, P-channel | 2 |
| Gate-Body Leakage (N-ch) | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 12 V, N-channel | 2 |
| Gate-Body Leakage (P-ch) | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 12 V, P-channel | 2 |
| Zero Gate Voltage Drain Current (N-ch) | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V, N-channel | 2 |
| Zero Gate Voltage Drain Current (P-ch) | IDSS | -1 |  |  | µA | VDS = -30 V, VGS = 0 V, P-channel | 2 |
| Zero Gate Voltage Drain Current (N-ch, hot) | IDSS |  |  | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-channel | 2 |
| Zero Gate Voltage Drain Current (P-ch, hot) | IDSS | -10 |  |  | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C, P-channel | 2 |
| On-State Drain Current (N-ch) | ID(on) | 20 |  |  | A | VDS = 5 V, VGS = 10 V, N-channel | 2 |
| On-State Drain Current (P-ch) | ID(on) |  |  | -20 | A | VDS = -5 V, VGS = -10 V, P-channel | 2 |
| Body Diode Voltage (N-ch) | VSD |  | 0.81 | 1.2 | V | IS = 5.4 A, N-channel | 3 |
| Body Diode Voltage (P-ch) | VSD | -1.2 | -0.77 |  | V | IS = -2 A, P-channel | 3 |
| Continuous Source-Drain Diode Current (N-ch) | IS |  |  | 2.6 | A | TC = 25 °C, N-channel | 3 |
| Continuous Source-Drain Diode Current (P-ch) | IS | -2.6 |  |  | A | TC = 25 °C, P-channel | 3 |

## CAD (KiCad official)

- Symbol: `IRF7379TRPBF-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7379trpbf-vb-etched.step` / `irf7379trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7379trpbf-vb.step` / `irf7379trpbf-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/irf7379trpbf-vb-datasheet.pdf) (14 pp, sha256 `b730d73fa1681b7d`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7379trpbf-vb-datasheet.pdf)