component
IRF7351TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7351TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF7351TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1 (Q1); the body diode continuous source current is rated at 1.8 A and pulsed at 64 A. |
| 2 | G1 | input | Gate of MOSFET 1 (Q1); VGS is rated at ±20 V maximum. |
| 3 | S2 | passive | Source terminal of MOSFET 2 (Q2); the body diode continuous source current is rated at 1.8 A and pulsed at 64 A. |
| 4 | G2 | input | Gate of MOSFET 2 (Q2); VGS is rated at ±20 V maximum. |
| 5 | D2 | passive | Drain of MOSFET 2 (Q2); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
| 6 | D2 | passive | Drain of MOSFET 2 (Q2); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
| 7 | D1 | passive | Drain of MOSFET 1 (Q1); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
| 8 | D1 | passive | Drain of MOSFET 1 (Q1); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V, TA = 25°C | ID | 8 | A | TA = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current, VGS @ 10V, TA = 70°C | ID | 6.4 | A | TA = 70°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 64 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Power Dissipation, TA = 25°C | PD | 2 | W | TA = 25°C | 1 | ||
| Power Dissipation, TA = 70°C | PD | 1.28 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.016 | W/°C | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 13.7 | 17.8 | mΩ | VGS = 10V, ID = 8.0A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 50µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 60V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 60V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 18 | S | VDS = 25V, ID = 6.4A | 2 | ||
| Total Gate Charge | Qg | 24 | 36 | nC | ID = 6.4A, VDS = 30V, VGS = 10V | 2 | |
| Continuous Source Current (Body Diode) | IS | 1.8 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 64 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 6.4A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 20 | 30 | ns | TJ = 25°C, IF = 6.4A, VDD = 30V, di/dt = 300A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 61 | 92 | nC | TJ = 25°C, IF = 6.4A, VDD = 30V, di/dt = 300A/µs | 2 | |
| Single Pulse Avalanche Energy | EAS | 325 | mJ | Starting TJ = 25°C, L = 16mH, RG = 25Ω, IAS = 6.4A | 2 | ||
| Avalanche Current | IAR | 6.4 | A | Starting TJ = 25°C, L = 16mH, RG = 25Ω, IAS = 6.4A | 2 | ||
| Junction-to-Drain Lead Thermal Resistance | RθJL | 20 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
IRF7351TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7351trpbf-etched.step/irf7351trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7351trpbf.step/irf7351trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
dfa3b0266da2a09d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7351TRPBF
**Infineon Technologies** · MOSFETs · SO-8
IRF7351TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1 (Q1); the body diode continuous source current is rated at 1.8 A and pulsed at 64 A. |
| 2 | G1 | input | Gate of MOSFET 1 (Q1); VGS is rated at ±20 V maximum. |
| 3 | S2 | passive | Source terminal of MOSFET 2 (Q2); the body diode continuous source current is rated at 1.8 A and pulsed at 64 A. |
| 4 | G2 | input | Gate of MOSFET 2 (Q2); VGS is rated at ±20 V maximum. |
| 5 | D2 | passive | Drain of MOSFET 2 (Q2); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
| 6 | D2 | passive | Drain of MOSFET 2 (Q2); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
| 7 | D1 | passive | Drain of MOSFET 1 (Q1); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
| 8 | D1 | passive | Drain of MOSFET 1 (Q1); VDSS is 60 V with ID of 8.0 A at TA = 25°C and 6.4 A at TA = 70°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current, VGS @ 10V, TA = 25°C | ID | | | 8 | A | TA = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current, VGS @ 10V, TA = 70°C | ID | | | 6.4 | A | TA = 70°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 64 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 |
| Power Dissipation, TA = 25°C | PD | | | 2 | W | TA = 25°C | 1 |
| Power Dissipation, TA = 70°C | PD | | | 1.28 | W | TA = 70°C | 1 |
| Linear Derating Factor | | | | 0.016 | W/°C | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 13.7 | 17.8 | mΩ | VGS = 10V, ID = 8.0A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 50µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 60V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 60V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 18 | | | S | VDS = 25V, ID = 6.4A | 2 |
| Total Gate Charge | Qg | | 24 | 36 | nC | ID = 6.4A, VDS = 30V, VGS = 10V | 2 |
| Continuous Source Current (Body Diode) | IS | | | 1.8 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 64 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 6.4A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 20 | 30 | ns | TJ = 25°C, IF = 6.4A, VDD = 30V, di/dt = 300A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 61 | 92 | nC | TJ = 25°C, IF = 6.4A, VDD = 30V, di/dt = 300A/µs | 2 |
| Single Pulse Avalanche Energy | EAS | | | 325 | mJ | Starting TJ = 25°C, L = 16mH, RG = 25Ω, IAS = 6.4A | 2 |
| Avalanche Current | IAR | | | 6.4 | A | Starting TJ = 25°C, L = 16mH, RG = 25Ω, IAS = 6.4A | 2 |
| Junction-to-Drain Lead Thermal Resistance | RθJL | | | 20 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRF7351TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7351trpbf-etched.step` / `irf7351trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7351trpbf.step` / `irf7351trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879893920276480) (10 pp, sha256 `dfa3b0266da2a09d`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7351trpbf-datasheet.pdf)