component
IRF7351TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIRF7351TR
UMW · MOSFETs · SOP-8
IRF7351TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1 (dual N-channel device); the datasheet gives no separate pin limit for this pin, and the absolute maximum drain-source voltage is 60 V with gate-source voltage ±20 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated at ±20 V maximum (VGS Max. 20 V). |
| 3 | S2 | passive | Source terminal of MOSFET 2 (dual N-channel device); the datasheet gives no separate pin limit for this pin, and the absolute maximum drain-source voltage is 60 V with gate-source voltage ±20 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated at ±20 V maximum (VGS Max. 20 V). |
| 5 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated at 60 V maximum, with continuous drain current 8 A at VGS=10V (TA=25°C). |
| 6 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated at 60 V maximum, with continuous drain current 8 A at VGS=10V (TA=25°C). |
| 7 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated at 60 V maximum, with continuous drain current 8 A at VGS=10V (TA=25°C). |
| 8 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated at 60 V maximum, with continuous drain current 8 A at VGS=10V (TA=25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 8 | A | VGS=10V, TA=25°C | 1 | ||
| Continuous Drain Current | ID | 6.4 | A | VGS=10V, TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 64 | A | 1 | |||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.28 | W | TA=70°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | V | VDS=VGS, ID=50μA | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 18 | 23 | mΩ | VGS=10V, ID=8A | 3 | |
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | 0.068 | V/°C | ID=1mA, Reference to 25°C | 3 | ||
| Continuous Source Current (Body Diode) | IS | 1.8 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | 64 | A | 4 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ=25°C, IS=6.4A, VGS=0V | 4 | ||
| Junction-to-Drain Lead | RθJL | 20 | °C/W | 2 | |||
| Junction-to-Ambient | RθJA | 62.5 | °C/W | When mounted on 1 inch square copper board | 2 | ||
| Single Pulse Avalanche Energy | EAS | 325 | mJ | Starting TJ=25°C, L=16mH, RG=25Ω, IAS=6.4A | 4 | ||
| Avalanche Current | IAR | 6.4 | A | 4 |
CAD (KiCad official)
- Symbol:
IRF7351TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7351tr-etched.step/irf7351tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7351tr.step/irf7351tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
90e899c4b47a77d2, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).