component
IRF7350TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7350TRPBF-VB
VBsemi Elec · MOSFETs · SO-8
IRF7350TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (100 V VDS, 0.240 Ω max RDS(on) at VGS = 10 V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-100 V VDS, 0.490 Ω max RDS(on) at VGS = -10 V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (-100 V VDS), tied internally to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (-100 V VDS), tied internally to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (100 V VDS), tied internally to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (100 V VDS), tied internally to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 100 | V | VGS = 0 V, ID = 250 μA, N-Ch | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -100 | V | VGS = 0 V, ID = -250 μA, P-Ch | 2 | ||
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.5 | 3 | V | VDS = VGS, ID = 250 μA, N-Ch | 2 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 μA, P-Ch | 2 | |
| Gate-Body Leakage (N-Ch) | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V, N-Ch | 2 | ||
| Gate-Body Leakage (P-Ch) | IGSS | -100 | nA | VDS = 0 V, VGS = ± 20 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | μA | VDS = 100 V, VGS = 0 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VDS = -100 V, VGS = 0 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch, hot) | IDSS | 10 | μA | VDS = 100 V, VGS = 0 V, TJ = 55 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch, hot) | IDSS | -10 | μA | VDS = -100 V, VGS = 0 V, TJ = 55 °C, P-Ch | 2 | ||
| On-State Drain Current (N-Ch) | ID(on) | 10 | A | VDS = 5 V, VGS = 10 V, N-Ch | 2 | ||
| On-State Drain Current (P-Ch) | ID(on) | -10 | A | VDS = -5 V, VGS = -10 V, P-Ch | 2 | ||
| Gate Resistance (N-Ch) | Rg | 0.6 | 3.3 | 6.6 | Ω | f = 1 MHz, N-Ch | 2 |
| Gate Resistance (P-Ch) | Rg | 3 | 13 | 26 | Ω | f = 1 MHz, P-Ch | 2 |
| Turn-On Delay Time (N-Ch) | td(on) | 5 | 10 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω, N-Ch | 3 | |
| Turn-On Delay Time (P-Ch) | td(on) | 7 | 15 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 | |
| Rise Time (P-Ch) | tr | 11 | 20 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 | |
| Turn-Off Delay Time (N-Ch) | td(off) | 12 | 25 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω, N-Ch | 3 | |
| Turn-Off Delay Time (P-Ch) | td(off) | 65 | 130 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 | |
| Fall Time (N-Ch) | tf | 6 | 15 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω, N-Ch | 3 | |
| Fall Time (P-Ch) | tf | 20 | 40 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 | |
| Turn-On Delay Time (N-Ch, 4.5 V) | td(on) | 32 | 65 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 | |
| Turn-On Delay Time (P-Ch, 4.5 V) | td(on) | 55 | 110 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 | |
| Rise Time (N-Ch, 4.5 V) | tr | 73 | 150 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 | |
| Rise Time (P-Ch, 4.5 V) | tr | 80 | 160 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 | |
| Turn-Off Delay Time (N-Ch, 4.5 V) | td(off) | 14 | 30 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 | |
| Turn-Off Delay Time (P-Ch, 4.5 V) | td(off) | 42 | 85 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 | |
| Fall Time (N-Ch, 4.5 V) | tf | 12 | 25 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 | |
| Fall Time (P-Ch, 4.5 V) | tf | 25 | 50 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 | |
| Pulse Diode Forward Current (N-Ch) | ISM | 30 | A | N-Ch | 3 | ||
| Pulse Diode Forward Current (P-Ch) | ISM | -20 | A | P-Ch | 3 | ||
| Body Diode Voltage (N-Ch) | VSD | 0.83 | 1.2 | V | IS = 2.6 A, N-Ch | 3 | |
| Body Diode Voltage (P-Ch) | VSD | -0.8 | -1.2 | V | IS = -2 A, P-Ch | 3 | |
| Body Diode Reverse Recovery Time (N-Ch) | trr | 30 | 60 | ns | IF = 2.6 A, dI/dt = 100 A/μs, TJ = 25 °C, N-Ch | 3 | |
| Body Diode Reverse Recovery Time (P-Ch) | trr | 42 | 85 | ns | IF = -2 A, dI/dt = -100 A/μs, TJ = 25 °C, P-Ch | 3 | |
| Body Diode Reverse Recovery Charge (N-Ch) | Qrr | 27 | 55 | nC | IF = 2.6 A, dI/dt = 100 A/μs, TJ = 25 °C, N-Ch | 3 | |
| Body Diode Reverse Recovery Charge (P-Ch) | Qrr | 93 | 190 | nC | IF = -2 A, dI/dt = -100 A/μs, TJ = 25 °C, P-Ch | 3 | |
| Drain-Source Voltage (N-Ch) | VDS | 100 | V | TA = 25 °C, N-Channel | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -100 | V | TA = 25 °C, P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current (N-Ch) | IDM | 8 | A | 100 μs pulse width, N-Ch | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -6 | A | 100 μs pulse width, P-Ch | 1 | ||
| Pulsed Source-Drain Current (N-Ch) | ISM | 8 | A | 100 μs pulse width, N-Ch | 1 | ||
| Pulsed Source-Drain Current (P-Ch) | ISM | -6 | A | 100 μs pulse width, P-Ch | 1 | ||
| Single Pulse Avalanche Energy (N-Ch) | EAS | 0.45 | mJ | L = 0.1 mH, N-Ch | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (N-Ch) | RthJA | 35 | 55 | °C/W | t ≤ 10 s, N-Ch | 1 | |
| Junction-to-Ambient Thermal Resistance (P-Ch) | RthJA | 33 | 55 | °C/W | t ≤ 10 s, P-Ch | 1 | |
| Junction-to-Foot Thermal Resistance (N-Ch) | RthJF | 20 | 35 | °C/W | Steady state, N-Ch | 1 | |
| Junction-to-Foot Thermal Resistance (P-Ch) | RthJF | 17 | 30 | °C/W | Steady state, P-Ch | 1 | |
| Input Capacitance (N-Ch) | Ciss | 600 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz, N-Ch | 2 | ||
| Output Capacitance (N-Ch) | Coss | 130 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz, N-Ch | 2 | ||
| Reverse Transfer Capacitance (N-Ch) | Crss | 20 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz, N-Ch | 2 | ||
| Forward Transconductance (N-Ch) | gfs | 8 | S | VDS = 15 V, ID = 2 A, N-Ch | 2 | ||
| Forward Transconductance (P-Ch) | gfs | 9.3 | S | VDS = -15 V, ID = -2 A, P-Ch | 2 |
CAD (KiCad official)
- Symbol:
IRF7350TRPBF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7350trpbf-vb-etched.step/irf7350trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7350trpbf-vb.step/irf7350trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
16609cb5b56a86f9, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7350TRPBF-VB
**VBsemi Elec** · MOSFETs · SO-8
IRF7350TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (100 V VDS, 0.240 Ω max RDS(on) at VGS = 10 V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-100 V VDS, 0.490 Ω max RDS(on) at VGS = -10 V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (-100 V VDS), tied internally to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (-100 V VDS), tied internally to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (100 V VDS), tied internally to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (100 V VDS), tied internally to pin 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 100 | | | V | VGS = 0 V, ID = 250 μA, N-Ch | 2 |
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -100 | | | V | VGS = 0 V, ID = -250 μA, P-Ch | 2 |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.5 | | 3 | V | VDS = VGS, ID = 250 μA, N-Ch | 2 |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | | -2.5 | V | VDS = VGS, ID = -250 μA, P-Ch | 2 |
| Gate-Body Leakage (N-Ch) | IGSS | | | 100 | nA | VDS = 0 V, VGS = ± 20 V, N-Ch | 2 |
| Gate-Body Leakage (P-Ch) | IGSS | | | -100 | nA | VDS = 0 V, VGS = ± 20 V, P-Ch | 2 |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | | | 1 | μA | VDS = 100 V, VGS = 0 V, N-Ch | 2 |
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | | | -1 | μA | VDS = -100 V, VGS = 0 V, P-Ch | 2 |
| Zero Gate Voltage Drain Current (N-Ch, hot) | IDSS | | | 10 | μA | VDS = 100 V, VGS = 0 V, TJ = 55 °C, N-Ch | 2 |
| Zero Gate Voltage Drain Current (P-Ch, hot) | IDSS | | | -10 | μA | VDS = -100 V, VGS = 0 V, TJ = 55 °C, P-Ch | 2 |
| On-State Drain Current (N-Ch) | ID(on) | 10 | | | A | VDS = 5 V, VGS = 10 V, N-Ch | 2 |
| On-State Drain Current (P-Ch) | ID(on) | -10 | | | A | VDS = -5 V, VGS = -10 V, P-Ch | 2 |
| Gate Resistance (N-Ch) | Rg | 0.6 | 3.3 | 6.6 | Ω | f = 1 MHz, N-Ch | 2 |
| Gate Resistance (P-Ch) | Rg | 3 | 13 | 26 | Ω | f = 1 MHz, P-Ch | 2 |
| Turn-On Delay Time (N-Ch) | td(on) | | 5 | 10 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω, N-Ch | 3 |
| Turn-On Delay Time (P-Ch) | td(on) | | 7 | 15 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 |
| Rise Time (P-Ch) | tr | | 11 | 20 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 |
| Turn-Off Delay Time (N-Ch) | td(off) | | 12 | 25 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω, N-Ch | 3 |
| Turn-Off Delay Time (P-Ch) | td(off) | | 65 | 130 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 |
| Fall Time (N-Ch) | tf | | 6 | 15 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω, N-Ch | 3 |
| Fall Time (P-Ch) | tf | | 20 | 40 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω, P-Ch | 3 |
| Turn-On Delay Time (N-Ch, 4.5 V) | td(on) | | 32 | 65 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 |
| Turn-On Delay Time (P-Ch, 4.5 V) | td(on) | | 55 | 110 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 |
| Rise Time (N-Ch, 4.5 V) | tr | | 73 | 150 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 |
| Rise Time (P-Ch, 4.5 V) | tr | | 80 | 160 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 |
| Turn-Off Delay Time (N-Ch, 4.5 V) | td(off) | | 14 | 30 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 |
| Turn-Off Delay Time (P-Ch, 4.5 V) | td(off) | | 42 | 85 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 |
| Fall Time (N-Ch, 4.5 V) | tf | | 12 | 25 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 3 |
| Fall Time (P-Ch, 4.5 V) | tf | | 25 | 50 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 3 |
| Pulse Diode Forward Current (N-Ch) | ISM | | | 30 | A | N-Ch | 3 |
| Pulse Diode Forward Current (P-Ch) | ISM | | | -20 | A | P-Ch | 3 |
| Body Diode Voltage (N-Ch) | VSD | | 0.83 | 1.2 | V | IS = 2.6 A, N-Ch | 3 |
| Body Diode Voltage (P-Ch) | VSD | | -0.8 | -1.2 | V | IS = -2 A, P-Ch | 3 |
| Body Diode Reverse Recovery Time (N-Ch) | trr | | 30 | 60 | ns | IF = 2.6 A, dI/dt = 100 A/μs, TJ = 25 °C, N-Ch | 3 |
| Body Diode Reverse Recovery Time (P-Ch) | trr | | 42 | 85 | ns | IF = -2 A, dI/dt = -100 A/μs, TJ = 25 °C, P-Ch | 3 |
| Body Diode Reverse Recovery Charge (N-Ch) | Qrr | | 27 | 55 | nC | IF = 2.6 A, dI/dt = 100 A/μs, TJ = 25 °C, N-Ch | 3 |
| Body Diode Reverse Recovery Charge (P-Ch) | Qrr | | 93 | 190 | nC | IF = -2 A, dI/dt = -100 A/μs, TJ = 25 °C, P-Ch | 3 |
| Drain-Source Voltage (N-Ch) | VDS | | | 100 | V | TA = 25 °C, N-Channel | 1 |
| Drain-Source Voltage (P-Ch) | VDS | | | -100 | V | TA = 25 °C, P-Channel | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Pulsed Drain Current (N-Ch) | IDM | | | 8 | A | 100 μs pulse width, N-Ch | 1 |
| Pulsed Drain Current (P-Ch) | IDM | | | -6 | A | 100 μs pulse width, P-Ch | 1 |
| Pulsed Source-Drain Current (N-Ch) | ISM | | | 8 | A | 100 μs pulse width, N-Ch | 1 |
| Pulsed Source-Drain Current (P-Ch) | ISM | | | -6 | A | 100 μs pulse width, P-Ch | 1 |
| Single Pulse Avalanche Energy (N-Ch) | EAS | | | 0.45 | mJ | L = 0.1 mH, N-Ch | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance (N-Ch) | RthJA | | 35 | 55 | °C/W | t ≤ 10 s, N-Ch | 1 |
| Junction-to-Ambient Thermal Resistance (P-Ch) | RthJA | | 33 | 55 | °C/W | t ≤ 10 s, P-Ch | 1 |
| Junction-to-Foot Thermal Resistance (N-Ch) | RthJF | | 20 | 35 | °C/W | Steady state, N-Ch | 1 |
| Junction-to-Foot Thermal Resistance (P-Ch) | RthJF | | 17 | 30 | °C/W | Steady state, P-Ch | 1 |
| Input Capacitance (N-Ch) | Ciss | | 600 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz, N-Ch | 2 |
| Output Capacitance (N-Ch) | Coss | | 130 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz, N-Ch | 2 |
| Reverse Transfer Capacitance (N-Ch) | Crss | | 20 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz, N-Ch | 2 |
| Forward Transconductance (N-Ch) | gfs | | 8 | | S | VDS = 15 V, ID = 2 A, N-Ch | 2 |
| Forward Transconductance (P-Ch) | gfs | | 9.3 | | S | VDS = -15 V, ID = -2 A, P-Ch | 2 |
## CAD (KiCad official)
- Symbol: `IRF7350TRPBF-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7350trpbf-vb-etched.step` / `irf7350trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7350trpbf-vb.step` / `irf7350trpbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/irf7350trpbf-vb-datasheet.pdf) (14 pp, sha256 `16609cb5b56a86f9`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7350trpbf-vb-datasheet.pdf)