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IRF7343TRPBF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7343TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF7343TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive N-channel MOSFET source, rated with VDS 60 V and VGS ±20 V (absolute maximum).
2 G1 input N-channel MOSFET gate, with gate-source voltage limited to ±20 V.
3 S2 passive P-channel MOSFET source, rated with VDS −60 V and VGS ±20 V (absolute maximum).
4 G2 input P-channel MOSFET gate, with gate-source voltage limited to ±20 V.
5 D2 passive P-channel MOSFET drain, with drain-source voltage rated −60 V.
6 D2 passive P-channel MOSFET drain, with drain-source voltage rated −60 V (connected internally to pin 5).
7 D1 passive N-channel MOSFET drain, with drain-source voltage rated 60 V.
8 D1 passive N-channel MOSFET drain, with drain-source voltage rated 60 V (connected internally to pin 7).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDS 60 V 1
Drain-Source Voltage (P-channel) VDS -60 V 1
Gate-Source Voltage (N and P channel) VGS -20 20 V 1
Continuous Drain Current (N-channel) ID 5.3 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current (N-channel) ID 4.3 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current (N-channel) ID 3.4 A TA = 70 °C 1
Continuous Drain Current (P-channel) ID -4.9 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current (P-channel) ID -4.2 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current (P-channel) ID -4 A TA = 25 °C 1
Continuous Drain Current (P-channel) ID -3.4 A TA = 70 °C 1
Pulsed Drain Current (N-channel) IDM 20 A 10 µs pulse width 1
Pulsed Drain Current (P-channel) IDM -25 A 10 µs pulse width 1
Source Drain Current Diode Current (N-channel) IS 2.6 A TC = 25 °C 1
Source Drain Current Diode Current (P-channel) IS -2.8 A TC = 25 °C 1
Pulsed Source-Drain Current (N-channel) ISM 20 A 1
Pulsed Source-Drain Current (P-channel) ISM -25 A 1
Single Pulse Avalanche Current (N-channel) IAS 11 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-channel) IAS 15 A L = 0.1 mH 1
Single Pulse Avalanche Energy (N-channel) EAS 6.1 mJ 1
Single Pulse Avalanche Energy (P-channel) EAS 11 mJ 1
Maximum Power Dissipation (N-channel) PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation (P-channel) PD 3.4 W TC = 25 °C 1
Maximum Power Dissipation (N-channel) PD 2 W TC = 70 °C 1
Maximum Power Dissipation (P-channel) PD 2.2 W TC = 70 °C 1
Maximum Power Dissipation (P-channel) PD 2 W TA = 25 °C 1
Maximum Power Dissipation (N-channel) PD 1.3 W TA = 70 °C 1
Maximum Power Dissipation (P-channel) PD 1.3 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-channel) RthJA 55 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (P-channel) RthJA 53 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (N and P channel, steady state) RthJA 110 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) (N-channel) RthJF 33 40 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) (P-channel) RthJF 30 37 °C/W Steady state 1
Drain-Source Breakdown Voltage (N-channel) VDS 60 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-channel) VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage (N-channel) VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-channel) VGS(th) -3 -1 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N-channel) IGSS 100 nA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage (P-channel) IGSS -100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current (N-channel) IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-channel) IDSS -1 µA VDS = -60 V, VGS = 0 V 2
On-State Drain Current (N-channel) ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
On-State Drain Current (P-channel) ID(on) -25 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance (P-channel) RDS(on) 0.055 Ω VGS = -10 V, ID = -3.1 A 2
Drain-Source On-State Resistance (N-channel) RDS(on) 0.029 Ω VGS = 4.5 V, ID = 3.9 A 2
Drain-Source On-State Resistance (P-channel) RDS(on) 0.06 Ω VGS = -4.5 V, ID = -0.2 A 2
Total Gate Charge (N-channel) Qg 13 20 nC VDS = 30 V, VGS = 10 V, ID = 4.3 A 2
Total Gate Charge (P-channel) Qg 14.5 22 nC VDS = -30 V, VGS = -10 V, ID = -3.1 A 2
Gate Resistance (N-channel) Rg 2 3 Ω f = 1 MHz 2
Gate Resistance (P-channel) Rg 14 20 Ω f = 1 MHz 2
Body Diode Voltage (N-channel) VSD 0.8 1.2 V IS = 1.7 A 3
Body Diode Voltage (P-channel) VSD -1.2 -0.8 V IS = -2 A 3
Body Diode Reverse Recovery Time (N-channel) trr 30 60 ns IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time (P-channel) trr 30 50 ns IF = -2 A, dI/dt = -100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge (N-channel) Qrr 32 50 nC 3
Body Diode Reverse Recovery Charge (P-channel) Qrr 35 60 nC 3

CAD (KiCad official)

  • Symbol: IRF7343TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7343trpbf-vb-etched.step / irf7343trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7343trpbf-vb.step / irf7343trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 1ecb9542d206b83c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF