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IRF7342TRPBF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7342TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF7342TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; VDS rated -60 V.
2 G1 input Gate of P-channel MOSFET 1; VGS maximum ±20 V.
3 S2 passive Source of P-channel MOSFET 2; VDS rated -60 V.
4 G2 input Gate of P-channel MOSFET 2; VGS maximum ±20 V.
5 D2 passive Drain of P-channel MOSFET 2, shorted to pin 6.
6 D2 passive Drain of P-channel MOSFET 2, shorted to pin 5.
7 D1 passive Drain of P-channel MOSFET 1, shorted to pin 8.
8 D1 passive Drain of P-channel MOSFET 1, shorted to pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID -5.3 A TA = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -5 A TA = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM -32 A 1
Continuous Source-Drain Diode Current IS -4.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2 A TA = 25 °C 1
Avalanche Current IAS -20 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 20 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 4 W TC = 25 °C 1
Maximum Power Dissipation PD 2.5 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C 1
Maximum Power Dissipation PD 1.4 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 38 50 °C/W t ≤ 10 s 1
Junction-to-Foot Thermal Resistance RthJF 20 25 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ - 10 V, VGS = - 10 V 2
Total Gate Charge Qg 32 50 nC VDS = - 15 V, VGS = - 10 V, ID = - 5 A 2
Total Gate Charge Qg 15 25 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 5 A 2
Turn-On Delay Time td(on) 10 15 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 8 15 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 45 70 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 12 25 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 42 70 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 35 60 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 40 70 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 16 30 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -4.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -32 A 2
Body Diode Voltage VSD -0.75 -1.2 V IS = - 2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 34 60 ns IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 22 40 nC IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.054 Ω VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.06 Ω VGS = - 4.5 V, ID = - 4.5 A 2
Forward Transconductance gfs 23 S VDS = - 10 V, ID = - 5 A 2
Input Capacitance Ciss 1345 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 210 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 180 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Gate Resistance Rg 5.8 Ω f = 1 MHz 2
Gate-Source Charge Qgs 4 nC 2
Gate-Drain Charge Qgd 7.5 nC 2
VDS Temperature Coefficient ΔVDS/TJ -31 mV/°C ID = - 250 µA 2

CAD (KiCad official)

  • Symbol: IRF7342TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7342trpbf-vb-etched.step / irf7342trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7342trpbf-vb.step / irf7342trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 74cc3c8313e2c2cc, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF