component
IRF7341
Public Made by Adomby adom
Slkor SLKORMICRO Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7341
Slkor SLKORMICRO Elec · MOSFETs · SOP-8
IRF7341 from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V max). |
| 2 | G1 | input | Gate of MOSFET 1, VGS limited to ±20V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 60V max). |
| 4 | G2 | input | Gate of MOSFET 2, VGS limited to ±20V. |
| 5 | D2 | passive | Drain of MOSFET 2, continuous current 5A at TA=25℃, pulsed 18A. |
| 6 | D2 | passive | Drain of MOSFET 2, continuous current 5A at TA=25℃, pulsed 18A. |
| 7 | D1 | passive | Drain of MOSFET 1, continuous current 5A at TA=25℃, pulsed 18A. |
| 8 | D1 | passive | Drain of MOSFET 1, continuous current 5A at TA=25℃, pulsed 18A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3.5 | A | TA=70℃ | 1 | ||
| Drain Current-Pulsed | IDM | 18 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 22 | mJ | 1 | |||
| Avalanche Current | IAS | 21 | A | 1 | |||
| Power Dissipation | PD | 1.5 | W | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Case | RθJC | 25 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=48V, TJ=25℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VGS=0V, VDS=48V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source On Resistance | RDS(ON) | 30 | 36 | mΩ | VGS=10V, ID=4A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 34 | 45 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 | ||
| Continuous Source Current | IS | 4.5 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | 18 | A | 3 |
CAD (KiCad official)
- Symbol:
IRF7341 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7341-etched.step/irf7341-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7341.step/irf7341.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (6 pp, sha256
3d6289fcc7452f4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7341
**Slkor SLKORMICRO Elec** · MOSFETs · SOP-8
IRF7341 from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V max). |
| 2 | G1 | input | Gate of MOSFET 1, VGS limited to ±20V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 60V max). |
| 4 | G2 | input | Gate of MOSFET 2, VGS limited to ±20V. |
| 5 | D2 | passive | Drain of MOSFET 2, continuous current 5A at TA=25℃, pulsed 18A. |
| 6 | D2 | passive | Drain of MOSFET 2, continuous current 5A at TA=25℃, pulsed 18A. |
| 7 | D1 | passive | Drain of MOSFET 1, continuous current 5A at TA=25℃, pulsed 18A. |
| 8 | D1 | passive | Drain of MOSFET 1, continuous current 5A at TA=25℃, pulsed 18A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 3.5 | A | TA=70℃ | 1 |
| Drain Current-Pulsed | IDM | | | 18 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 22 | mJ | | 1 |
| Avalanche Current | IAS | | | 21 | A | | 1 |
| Power Dissipation | PD | | | 1.5 | W | | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 85 | ℃/W | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 25 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS=0V, VDS=48V, TJ=25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | VGS=0V, VDS=48V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | | 30 | 36 | mΩ | VGS=10V, ID=4A | 2 |
| Drain-Source On Resistance | RDS(ON) | | 34 | 45 | mΩ | VGS=4.5V, ID=3A | 2 |
| Source-Drain Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
| Continuous Source Current | IS | | | 4.5 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM | | | 18 | A | | 3 |
## CAD (KiCad official)
- Symbol: `IRF7341`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7341-etched.step` / `irf7341-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7341.step` / `irf7341.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Slkor SLKORMICRO Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602879105201557504) (6 pp, sha256 `3d6289fcc7452f4a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7341-datasheet.pdf)