component
IRF7324TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7324TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF7324TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; MOSFET 1 is rated for -20V drain-source and -9.0A continuous drain current at TA = 25°C. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-to-source voltage is limited to ±12V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; MOSFET 2 is rated for -20V drain-source and -9.0A continuous drain current at TA = 25°C. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-to-source voltage is limited to ±12V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2 (joined with pin 6); drain-source voltage rated to -20V and pulsed drain current to -71A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (joined with pin 5); drain-source voltage rated to -20V and pulsed drain current to -71A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1 (joined with pin 8); drain-source voltage rated to -20V and pulsed drain current to -71A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1 (joined with pin 7); drain-source voltage rated to -20V and pulsed drain current to -71A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | -20 | V | 1 | |||
| Continuous Drain Current, TA = 25°C | ID | -9 | A | VGS @ -4.5V | 1 | ||
| Continuous Drain Current, TA = 70°C | ID | -7.1 | A | VGS @ -4.5V | 1 | ||
| Pulsed Drain Current | IDM | -71 | A | 1 | |||
| Maximum Power Dissipation, TA = 25°C | PD | 2 | W | 1 | |||
| Maximum Power Dissipation, TA = 70°C | PD | 1.3 | W | 1 | |||
| Linear Derating Factor | 16 | mW/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | 1 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -2.0A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 180 | 270 | ns | TJ = 25°C, IF = -2.0A | 2 | |
| Reverse Recovery Charge | Qrr | 300 | 450 | nC | di/dt = -100A/µs | 2 | |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 0.018 | Ω | VGS = -4.5V, ID = -9.0A | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 0.026 | Ω | VGS = -2.5V, ID = -7.7A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.45 | -1 | V | VDS = VGS, ID = -250µA | 2 | |
| Forward Transconductance | gfs | 19 | S | VDS = -10V, ID = -9.0A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | VDS = -16V, VGS = 0V | 2 | |||
| Drain-to-Source Leakage Current, TJ = 125°C | IDSS | -25 | VDS = -16V, VGS = 0V, TJ = 125°C | 2 | |||
| Gate-to-Source Forward Leakage | -100 | VGS = -12V | 2 | ||||
| Gate-to-Source Reverse Leakage | 100 | VGS = 12V | 2 | ||||
| Total Gate Charge | Qg | 42 | 63 | nC | ID = -9.0A | 2 | |
| Gate-to-Source Charge | Qgs | 7.1 | 11 | nC | VDS = -16V | 2 | |
| Gate-to-Drain (Miller) Charge | Qgd | 12 | 18 | nC | VGS = -5.0V | 2 | |
| Continuous Source Current (Body Diode) | IS | 2 | 2 | ||||
| Pulsed Source Current (Body Diode) | ISM | -71 | 2 |
CAD (KiCad official)
- Symbol:
IRF7324TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7324trpbf-etched.step/irf7324trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7324trpbf.step/irf7324trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
2a6baa0cad8d40cd, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7324TRPBF
**Infineon Technologies** · MOSFETs · SO-8
IRF7324TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; MOSFET 1 is rated for -20V drain-source and -9.0A continuous drain current at TA = 25°C. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-to-source voltage is limited to ±12V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; MOSFET 2 is rated for -20V drain-source and -9.0A continuous drain current at TA = 25°C. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-to-source voltage is limited to ±12V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2 (joined with pin 6); drain-source voltage rated to -20V and pulsed drain current to -71A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (joined with pin 5); drain-source voltage rated to -20V and pulsed drain current to -71A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1 (joined with pin 8); drain-source voltage rated to -20V and pulsed drain current to -71A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1 (joined with pin 7); drain-source voltage rated to -20V and pulsed drain current to -71A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | -20 | V | | 1 |
| Continuous Drain Current, TA = 25°C | ID | | | -9 | A | VGS @ -4.5V | 1 |
| Continuous Drain Current, TA = 70°C | ID | | | -7.1 | A | VGS @ -4.5V | 1 |
| Pulsed Drain Current | IDM | | | -71 | A | | 1 |
| Maximum Power Dissipation, TA = 25°C | PD | | | 2 | W | | 1 |
| Maximum Power Dissipation, TA = 70°C | PD | | | 1.3 | W | | 1 |
| Linear Derating Factor | | | | 16 | mW/°C | | 1 |
| Gate-to-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | °C/W | | 1 |
| Diode Forward Voltage | VSD | | | -1.2 | V | TJ = 25°C, IS = -2.0A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 180 | 270 | ns | TJ = 25°C, IF = -2.0A | 2 |
| Reverse Recovery Charge | Qrr | | 300 | 450 | nC | di/dt = -100A/µs | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID = -250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | | 0.018 | Ω | VGS = -4.5V, ID = -9.0A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | | 0.026 | Ω | VGS = -2.5V, ID = -7.7A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.45 | | -1 | V | VDS = VGS, ID = -250µA | 2 |
| Forward Transconductance | gfs | 19 | | | S | VDS = -10V, ID = -9.0A | 2 |
| Drain-to-Source Leakage Current | IDSS | | | -1 | | VDS = -16V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current, TJ = 125°C | IDSS | | | -25 | | VDS = -16V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | | | | -100 | | VGS = -12V | 2 |
| Gate-to-Source Reverse Leakage | | | | 100 | | VGS = 12V | 2 |
| Total Gate Charge | Qg | | 42 | 63 | nC | ID = -9.0A | 2 |
| Gate-to-Source Charge | Qgs | | 7.1 | 11 | nC | VDS = -16V | 2 |
| Gate-to-Drain (Miller) Charge | Qgd | | 12 | 18 | nC | VGS = -5.0V | 2 |
| Continuous Source Current (Body Diode) | IS | | | 2 | | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | -71 | | | 2 |
## CAD (KiCad official)
- Symbol: `IRF7324TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7324trpbf-etched.step` / `irf7324trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7324trpbf.step` / `irf7324trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879963688329216) (8 pp, sha256 `2a6baa0cad8d40cd`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7324trpbf-datasheet.pdf)