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IRF7319TRPBF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7319TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF7319TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS, 8 A package-limited ID).
2 G1 input Gate of the N-channel MOSFET, rated for VGS of ±20 V.
3 S2 passive Source of the P-channel MOSFET (-30 V VDS, -8 A package-limited ID).
4 G2 input Gate of the P-channel MOSFET, rated for VGS of ±20 V.
5 D2 passive Drain of the P-channel MOSFET, tied internally to pins 6, 7 and 8 per the pin diagram; pulsed drain current is -40 A.
6 D2 passive Drain of the P-channel MOSFET, shown in the pinout as D2 along with pin 5.
7 D1 passive Drain of the N-channel MOSFET, shown in the pinout as D1 along with pin 8.
8 D1 passive Drain of the N-channel MOSFET; pulsed drain current is 40 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDS 30 V N-channel 1
Drain-Source Voltage (P-channel) VDS -30 V P-channel, printed as -30 V 1
Gate-Source Voltage (N-channel) VGS -20 20 V N-channel 1
Gate-Source Voltage (P-channel) VGS -20 20 V P-channel 1
Continuous Drain Current (N-channel) ID 8 A TC = 25 °C, TJ = 150 °C, N-channel; package limited 1
Continuous Drain Current (P-channel) ID -8 A TC = 25 °C, TJ = 150 °C, P-channel; package limited 1
Continuous Drain Current (N-channel) ID 6.8 A TC = 70 °C, TJ = 150 °C, N-channel 1
Continuous Drain Current (P-channel) ID -6.8 A TC = 70 °C, TJ = 150 °C, P-channel 1
Continuous Drain Current (P-channel) ID -6.6 A TA = 25 °C, P-channel (notes b, c) 1
Continuous Drain Current (N-channel) ID 5.4 A TA = 70 °C, N-channel (notes b, c) 1
Continuous Drain Current (P-channel) ID -5.3 A TA = 70 °C, P-channel (notes b, c) 1
Pulsed Drain Current (N-channel) IDM 40 A 10 µs pulse width, N-channel 1
Pulsed Drain Current (P-channel) IDM -40 A 10 µs pulse width, P-channel 1
Source-Drain Current Diode Current (N-channel) IS 2.6 A TC = 25 °C, N-channel 1
Source-Drain Current Diode Current (P-channel) IS -2.6 A TC = 25 °C, P-channel 1
Source-Drain Current Diode Current (N-channel) IS 1.6 A TA = 25 °C, N-channel (notes b, c) 1
Source-Drain Current Diode Current (P-channel) IS -1.6 A TA = 25 °C, P-channel (notes b, c) 1
Pulsed Source-Drain Current (N-channel) ISM 40 A N-channel 1
Pulsed Source-Drain Current (P-channel) ISM -40 A P-channel 1
Single Pulse Avalanche Current (N-channel) IAS 10 A L = 0.1 mH, N-channel 1
Single Pulse Avalanche Current (P-channel) IAS -20 A L = 0.1 mH, P-channel 1
Single Pulse Avalanche Energy EAS 520 mJ 1
Maximum Power Dissipation (N-channel) PD 3.1 W TC = 25 °C, N-channel 1
Maximum Power Dissipation (P-channel) PD 3.2 W TC = 25 °C, P-channel 1
Maximum Power Dissipation (N-channel) PD 2 W TA = 25 °C, N-channel (notes b, c) 1
Maximum Power Dissipation (P-channel) PD 2 W TA = 25 °C, P-channel (notes b, c) 1
Maximum Power Dissipation (N-channel) PD 1.28 W TA = 70 °C, N-channel (notes b, c) 1
Maximum Power Dissipation (P-channel) PD 1.28 W TA = 70 °C, P-channel (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-channel) RthJA 50 62.5 °C/W t ≤ 10 s, N-channel (notes b, d) 1
Maximum Junction-to-Ambient (P-channel) RthJA 47 62.5 °C/W t ≤ 10 s, P-channel (notes b, d) 1
Maximum Junction-to-Foot (Drain) (N-channel) RthJF 30 40 °C/W Steady state, N-channel 1
Maximum Junction-to-Foot (Drain) (P-channel) RthJF 29 38 °C/W Steady state, P-channel 1
Drain-Source Breakdown Voltage (N-channel) VDS 30 V VGS = 0 V, ID = 250 µA, N-channel 2
Drain-Source Breakdown Voltage (P-channel) VDS -30 V VGS = 0 V, ID = -250 µA, P-channel 2
Gate Threshold Voltage (N-channel) VGS(th) 1 2 V VDS = VGS, ID = 250 µA, N-channel 2
Gate Threshold Voltage (P-channel) VGS(th) -2 -1 V VDS = VGS, ID = -250 µA, P-channel 2
Gate-Body Leakage (N-channel) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V, N-channel 2
Gate-Body Leakage (P-channel) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V, P-channel 2
Zero Gate Voltage Drain Current (N-channel) IDSS 1 µA VDS = 30 V, VGS = 0 V, N-channel 2
Zero Gate Voltage Drain Current (P-channel) IDSS -1 µA VDS = -30 V, VGS = 0 V, P-channel 2
Zero Gate Voltage Drain Current, TJ = 55 °C (N-channel) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-channel 2
Zero Gate Voltage Drain Current, TJ = 55 °C (P-channel) IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C, P-channel 2
Body Diode Reverse Recovery Charge (N-channel) Qrr 10 17 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C, N-channel 3
Body Diode Reverse Recovery Charge (P-channel) Qrr 29 47 nC IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-channel 3
Body Diode Voltage (N-channel) VSD 0.81 1.2 V IS = 5.4 A, N-channel 3
Body Diode Voltage (P-channel) VSD -0.77 -1.2 V IS = -2 A, P-channel 3
Gate Resistance (P-channel) Rg 1.2 5.7 9.6 Ω f = 1 MHz, P-channel 2
Turn-On Delay Time (N-channel, VGS = 10 V) td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-channel 3
Turn-On Delay Time (P-channel, VGS = -10 V) td(on) 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-channel 3
On-State Drain Current (N-channel) ID(on) 20 A VDS = 5 V, VGS = 10 V, N-channel 2
On-State Drain Current (P-channel) ID(on) -20 A VDS = -5 V, VGS = -10 V, P-channel 2
Drain-Source On-State Resistance (P-channel) RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A, P-channel 2
Drain-Source On-State Resistance (N-channel) RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A, N-channel 2
Drain-Source On-State Resistance (P-channel) RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A, P-channel 2
Drain-Source On-State Resistance (N-channel) RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A, N-channel 2
Drain-Source On-State Resistance (P-channel) RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A, P-channel 2

CAD (KiCad official)

  • Symbol: IRF7319TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7319trpbf-vb-etched.step / irf7319trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7319trpbf-vb.step / irf7319trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 62b13f3939747d92, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF