component
IRF7319TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7319TR
UMW · MOSFETs · SOP-8
IRF7319TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first MOSFET channel; the device is rated VDS 30V for the N-channel and -30V for the P-channel. |
| 2 | G1 | input | Gate terminal of the first MOSFET channel; VGS is rated ±20V for both channels. |
| 3 | S2 | passive | Source terminal of the second MOSFET channel; the device is rated VDS 30V for the N-channel and -30V for the P-channel. |
| 4 | G2 | input | Gate terminal of the second MOSFET channel; VGS is rated ±20V for both channels. |
| 5 | D2 | passive | Drain terminal of the second MOSFET channel, tied to pin 6 on the package. |
| 6 | D2 | passive | Drain terminal of the second MOSFET channel, tied to pin 5 on the package. |
| 7 | D1 | passive | Drain terminal of the first MOSFET channel, tied to pin 8 on the package. |
| 8 | D1 | passive | Drain terminal of the first MOSFET channel, tied to pin 7 on the package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 2 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 2 | |||
| Gate-Source Voltage (N-Channel and P-Channel) | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 6.5 | A | TA= 25°C | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -4.9 | A | TA= 25°C | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 5.2 | A | TA=70°C | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -3.9 | A | TA=70°C | 2 | ||
| Pulsed Drain Current (N-Channel) | IDM | 30 | A | 2 | |||
| Pulsed Drain Current (P-Channel) | IDM | -30 | A | 2 | |||
| Continuous Source Current (Diode Conduction) (N-Channel) | IS | 2.5 | A | 2 | |||
| Continuous Source Current (Diode Conduction) (P-Channel) | IS | -2.5 | A | 2 | |||
| Single Pulse Avalanche Energy (N-Channel) | EAS | 82 | mJ | 2 | |||
| Single Pulse Avalanche Energy (P-Channel) | EAS | 140 | mJ | 2 | |||
| Avalanche Current (N-Channel) | IAR | 4 | A | 2 | |||
| Avalanche Current (P-Channel) | IAR | -2.8 | A | 2 | |||
| Repetitive Avalanche Energy (N-Channel) | EAR | 0.2 | mJ | 2 | |||
| Peak Diode Recovery dv/dt (N-Channel) | dv/dt | 5 | V/ns | Note ②: N-Channel ISD≤4A, di/dt≤74A/μs, VDD≤V(BR)DSS, TJ≤150°C | 2 | ||
| Peak Diode Recovery dv/dt (P-Channel) | dv/dt | -5 | V/ns | Note ②: P-Channel ISD≤-2.8A, di/dt≤150A/μs, VDD≤V(BR)DSS, TJ≤150°C | 2 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Power Dissipation | PD | 2 | W | TA= 25°C | 2 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA=70°C | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 62.5 | °C/W | Note ⑤: surface mounted on FR-4 board, t≤10 sec | 2 | ||
| Drain-to-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Drain-to-Source Breakdown Voltage (P-Channel) | V(BR)DSS | -30 | V | ID=-250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | V | VDS=VGS, ID=250μA | 3 | ||
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | V | VDS=VGS, ID=-250μA | 3 | ||
| Forward Transconductance (N-Channel) | gfs | 14 | S | VDS=15V, ID=5.8A | 3 | ||
| Forward Transconductance (P-Channel) | gfs | 7.7 | S | VDS=-15V, ID=-4.9A | 3 | ||
| Drain-to-Source Leakage Current (N-Channel) | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (P-Channel) | IDSS | -1 | µA | VDS=-24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (N-Channel) | IDSS | 25 | µA | VDS=24V, VGS=0V, TJ=55°C | 3 | ||
| Drain-to-Source Leakage Current (P-Channel) | IDSS | -25 | µA | VDS=-24V, VGS=0V, TJ=55°C | 3 | ||
| Gate-to-Source Forward Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Turn-Off Delay Time (N-Channel) | tD(off) | 26 | 39 | ns | 4 | ||
| Turn-Off Delay Time (P-Channel) | tD(off) | 34 | 51 | ns | P-Ch: VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω | 4 | |
| Fall Time (N-Channel) | tf | 17 | 26 | ns | 4 | ||
| Fall Time (P-Channel) | tf | 32 | 48 | ns | P-Ch: VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω | 4 | |
| Diode Forward Voltage (N-Channel) | VSD | 0.78 | 1 | V | TJ=25°C, IS=1.7A,VGS=0V | 4 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.78 | -1 | V | TJ=25°C, IS=-1.7A,VGS=0V | 4 | |
| Reverse Recovery Time (N-Channel) | trr | 45 | 68 | ns | N-Ch: TJ=25°C, IF=1.7A, di/dt=100A/µs | 4 | |
| Reverse Recovery Time (P-Channel) | trr | 44 | 66 | ns | P-Ch: TJ=25°C, IF=-1.7A, di/dt=100A/µs | 4 | |
| Reverse Recovery Charge (N-Channel) | Qrr | 58 | 87 | nC | N-Ch: TJ=25°C, IF=1.7A, di/dt=100A/µs | 4 | |
| Reverse Recovery Charge (P-Channel) | Qrr | 42 | 63 | nC | P-Ch: TJ=25°C, IF=-1.7A, di/dt=100A/µs | 4 | |
| Pulsed Source Current (Body Diode) (N-Channel) | ISM | 30 | A | Note ①: repetitive rating; pulse width limited by max. junction temperature | 4 | ||
| Pulsed Source Current (Body Diode) (P-Channel) | ISM | -30 | A | Note ①: repetitive rating; pulse width limited by max. junction temperature | 4 |
CAD (KiCad official)
- Symbol:
IRF7319TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7319tr-etched.step/irf7319tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7319tr.step/irf7319tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
84ae1600aff30f8e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).