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IRF7311TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7311TR

UMW · MOSFETs · SOP-8

IRF7311TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of channel 1 (S1); the device is rated for VDS 30V and continuous ID of 9A at TC=25°C.
2 G1 input Gate of channel 1 (G1); gate-source voltage VGS is rated ±20V.
3 S2 passive Source terminal of channel 2 (S2); the device is rated for VDS 30V and continuous ID of 9A at TC=25°C.
4 G2 input Gate of channel 2 (G2); gate-source voltage VGS is rated ±20V.
5 D1,D2 passive Drain pin of the dual N-channel MOSFET (D1/D2); drain-source voltage VDS is rated 30V.
6 D1,D2 passive Drain pin of the dual N-channel MOSFET (D1/D2); drain-source voltage VDS is rated 30V.
7 D1,D2 passive Drain pin of the dual N-channel MOSFET (D1/D2); drain-source voltage VDS is rated 30V.
8 D1,D2 passive Drain pin of the dual N-channel MOSFET (D1/D2); drain-source voltage VDS is rated 30V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9 A VGS=10V; TC=25°C 1
Continuous Drain Current ID 8.2 A VGS=10V; TC=100°C 1
Continuous Drain Current ID 6.5 A VGS=10V; TA=25°C 1
Continuous Drain Current ID 5.6 A VGS=10V; TA=70°C 1
Pulsed Drain Current IDM 30 A 1
Single Pulse Avalanche Energy EAS 15 mJ 1
Avalanche Current IAS 22 A 1
Total Power Dissipation PD 1.6 W TC=25°C 2
Total Power Dissipation PD 1 W TA=70°C 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -40 105 °C 2
Thermal Resistance Junction-Ambient RθJA 75 °C/W 2
Thermal Resistance Junction-Case RθJC 4.8 °C/W 2
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VDS=VGS, ID=250μA 3
Static Drain-to-Source On-Resistance RDS(ON) 13 mΩ VGS=10V, ID=6.5A 3
Static Drain-to-Source On-Resistance RDS(ON) 18 mΩ VGS=4.5V, ID=5A 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Drain-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V, TJ=25°C 3
Drain-Source Leakage Current IDSS 5 µA VDS=24V, VGS=0V, TJ=55°C 3
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ 0.023 V/°C ID=1mA,Reference to 25°C 3
VGS(th) Temperature Coefficient ΔVGS(th) -5.08 mV/°C VDS=VGS, ID=250μA 3
Input Capacitance Ciss 580 pF VDS=15V, VGS=0V, f=1MHz 3
Output Capacitance Coss 97 pF VDS=15V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 39 pF VDS=15V, VGS=0V, f=1MHz 3

CAD (KiCad official)

  • Symbol: IRF7311TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7311tr-etched.step / irf7311tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7311tr.step / irf7311tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 2f236eba30b4cf27, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF