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Contents

README

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IRF7304TR

UMW · MOSFETs · SOP-8

IRF7304TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of P-channel MOSFET 1, the reference for the gate-to-source rating VGS of ±12 V.
2 G1 input Gate of P-channel MOSFET 1; gate-to-source voltage is rated ±12 V (VGS), per the absolute maximum table.
3 S2 passive Source terminal of P-channel MOSFET 2, the reference for the gate-to-source rating VGS of ±12 V.
4 G2 input Gate of P-channel MOSFET 2; gate-to-source voltage is rated ±12 V (VGS), per the absolute maximum table.
5 D1,D2 passive Drain terminal of the dual P-channel MOSFET; drain-to-source voltage is -20 V (VDS) and continuous drain current is -4.7 A at TA=25°C.
6 D1,D2 passive Drain terminal of the dual P-channel MOSFET; drain-to-source voltage is -20 V (VDS) and continuous drain current is -4.7 A at TA=25°C.
7 D1,D2 passive Drain terminal of the dual P-channel MOSFET; drain-to-source voltage is -20 V (VDS) and continuous drain current is -4.7 A at TA=25°C.
8 D1,D2 passive Drain terminal of the dual P-channel MOSFET; drain-to-source voltage is -20 V (VDS) and continuous drain current is -4.7 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -20 V ID=-250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) -0.7 -1 V VDS=VGS, ID=-250μA 3
Forward Transconductance gFS 4 S VDS=-16V, ID=-2.2A 3
Static Drain-to-Source On-Resistance (VGS=-4.5V) RDS(ON) 90 mΩ VGS=-4.5V, ID=-2.2A 3
Static Drain-to-Source On-Resistance (VGS=-2.7V) RDS(ON) 140 mΩ VGS=-2.7V, ID=-1.8A 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-12V 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=12V 3
Drain-to-Source Leakage Current IDSS -1 µA VDS=-16V, VGS=0V 3
Drain-to-Source Leakage Current (TJ=125°C) IDSS -25 µA VDS=-16V, VGS=0V, TJ=125°C 3
Gate-to-Source Voltage VGS -12 12 V 2
Peak Diode Recovery dv/dt dv/dt -5 V/nS 2
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2
Continuous Drain Current (10 s pulsed) ID -4.7 A 10 Sec. Pulsed Drain Current, VGS=-4.5V 1
Continuous Drain Current ID -4.3 A VGS=-4.5V, TA=25°C 1
Continuous Drain Current ID -3.4 A VGS=-4.5V, TA=70°C 1
Pulsed Drain Current IDM -17 A Repetitive rating; pulse width limited by max. junction temperature (see fig.11) 1
Power Dissipation PD 2 W TA=25°C 1
Maximum Junction-to-Ambient RθJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRF7304TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7304tr-etched.step / irf7304tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7304tr.step / irf7304tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 344ae69b9e980cf3, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF