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IRF7301TR

UMW · MOSFETs · SOP-8

IRF7301TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1 (S1 in the datasheet pinning table); the datasheet gives no separate pin-level limit, so the absolute maximum ratings on page 2 apply.
2 G1 input Gate terminal of MOSFET 1; gate-to-source voltage is rated at VGS = ±12V.
3 S2 passive Source terminal of MOSFET 2 (S2 in the datasheet pinning table); the datasheet gives no separate pin-level limit, so the absolute maximum ratings on page 2 apply.
4 G2 input Gate terminal of MOSFET 2; gate-to-source voltage is rated at VGS = ±12V.
5 D1 passive Drain terminal (DRAIN, grouped as D1,D2 with pins 6-8 in the datasheet pinning table); drain-to-source voltage is rated at VDS = 20V.
6 D1 passive Drain terminal (DRAIN, grouped as D1,D2 with pins 5, 7, 8 in the datasheet pinning table); drain-to-source voltage is rated at VDS = 20V.
7 D2 passive Drain terminal (DRAIN, grouped as D1,D2 with pins 5, 6, 8 in the datasheet pinning table); drain-to-source voltage is rated at VDS = 20V.
8 D2 passive Drain terminal (DRAIN, grouped as D1,D2 with pins 5-7 in the datasheet pinning table); drain-to-source voltage is rated at VDS = 20V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain current, 10 s pulsed, VGS=4.5V (absolute maximum) ID 5.7 A VGS=4.5V, TA=25°C, 10 sec pulsed 1
Continuous drain current, VGS=4.5V (absolute maximum) ID 5.2 A VGS=4.5V, TA=25°C 1
Continuous drain current, VGS=4.5V (absolute maximum) ID 4.1 A VGS=4.5V, TA=70°C 1
Pulsed drain current (absolute maximum) IDM 21 A TA=25°C 1
Power dissipation (absolute maximum) PD 2 W TA=25°C 1
Gate-to-source voltage (absolute maximum) VGS -12 12 V 2
Peak diode recovery dv/dt (absolute maximum) dv/dt 5 V/nS 2
Junction and storage temperature range (absolute maximum) TJ, TSTG -55 150 °C 2
Maximum junction-to-ambient thermal resistance R 62.5 °C/W Maximum junction-to-ambient 2
Drain-source breakdown voltage V(BR)DSS 20 V ID=250µA, VGS=0V 3
Gate threshold voltage VGS(th) 0.7 2.2 V VDS=VGS, ID 3
Drain-to-source leakage current IDSS 1 µA VDS=16V, VGS=0V 3
Drain-to-source leakage current, TJ=125°C IDSS 25 µA VDS=16V, VGS=0V, TJ=125°C 3
Gate-to-source forward leakage IGSS 100 nA VGS=12V 3
Gate-to-source reverse leakage IGSS -100 nA VGS=-12V 3
Static drain-to-source on-resistance RDS(ON) 40 mΩ VGS=4.5V, ID=2.6A 3
Static drain-to-source on-resistance RDS(ON) 50 mΩ VGS=2.7V, ID=2.2A 3
Continuous source current (body diode) IS 2.5 A 4
Pulsed source current (body diode) ISM 21 A 4
Diode forward voltage VSD 1 V TJ=25°C, IS=1.8A, VGS=0V 4
Reverse recovery time trr 29 44 ns TJ=25°C, IF=2.6A 4
Reverse recovery charge Qrr 22 33 nC TJ=25°C, IF=2.6A 4

CAD (KiCad official)

  • Symbol: IRF7301TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7301tr-etched.step / irf7301tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7301tr.step / irf7301tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 3da063414fa16628, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF