component
IRF730
Public Made by Adomby adom
OSEN MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2h ago |
| viewers | 2h ago |
| irf730-etched.glb | 2h ago |
| irf730-etched.step | 2h ago |
| irf730-hero.glb | 2h ago |
| irf730-hero.overlay.json | 2h ago |
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| irf730.kicad_mod | 2h ago |
| irf730.kicad_sym | 2h ago |
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| irf730.step | 2h ago |
| package.json | 2h ago |
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| README.md | 2h ago |
IRF730
OSEN · MOSFETs · TO-220AB
IRF730 from OSEN, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; gate-source voltage is rated ±30 V continuous with a 2.0 V to 4.0 V threshold at ID=250µA. |
| 2 | Drain | passive | Drain terminal, rated 450 V drain-source voltage and 6 A continuous drain current (25 A pulsed). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with a 6 A continuous body-diode forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 450 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS=400V, VGS=0 | 2 | ||
| Forward Transconductance | gfs | 2.9 | S | VDS=50V, ID=3.3A | 2 | ||
| Total Gate Charge | Qg | 38 | nC | VDS=320V, VGS=10V, ID=3.5A (Note 2) | 3 | ||
| Gate-Source Charge | Qgs | 5.7 | nC | VDS=320V, VGS=10V, ID=3.5A (Note 2) | 3 | ||
| Gate-Drain Charge | Qgd | -22 | nC | VDS=320V, VGS=10V, ID=3.5A (Note 2) | 3 | ||
| Continuous Drain-Source Diode Forward Current | IS | 6 | A | (Note 2) | 3 | ||
| Diode Forward On-Voltage | VSD | 1.6 | V | IS=6A, VGS=0 | 3 | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.27 | ℃/W | 3 | |||
| Drain-Source Voltage | VDSS | 450 | V | Tc=25°C | 2 | ||
| Gate-Source Voltage-Continuous | VGS | -30 | 30 | V | Tc=25°C | 2 | |
| Drain Current-Continuous | ID | 6 | A | Tc=25°C (Note 2) | 2 | ||
| Drain Current-Single Pulsed | IDM | 25 | A | Note 1 | 2 | ||
| Power Dissipation | PD | 55 | W | Tc=25°C (Note 2) | 2 | ||
| Max. Operating Junction Temperature | Tj | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
IRF730 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf730-etched.step/irf730-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf730.step/irf730.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
79dd0675c957d2ec, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).