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IRF7241PBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF7241PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate of the P-channel MOSFET, with VGS rated ±20 V and threshold VGS(th) of -1.0 to -2.2 V.
5 D passive Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8, rated VDS -40 V and ID -13 A.
6 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8, rated VDS -40 V and ID -13 A.
7 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8, rated VDS -40 V and ID -13 A.
8 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7, rated VDS -40 V and ID -13 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current, continuous ID -13 A TA=25℃; VGS @ 10V 1
Pulsed Drain Current IDM -52 A 1
Total Power Dissipation PD 3 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 41 ℃/W Junction-ambient, note 3: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS = 0V, ID = -250µA 2
Gate-body Leakage current lGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS -1 µA TJ=25℃; VDS = -40V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -100 µA TJ=100℃; VDS = -40V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) -1 -1.5 -2.2 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 14 19 mΩ VGS = -10V, ID = -10A 2
Drain-Source On-Resistance RDS(on) 19.5 25 mΩ VGS = -4.5V, ID = -5 A 2
Diode Forward Voltage VSD -1.2 V IS = -10A, VGS = 0V 2
Continuous Source Current IS -13 A TC=25°C 2

CAD (KiCad official)

  • Symbol: IRF7241PBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7241pbf-hxy-etched.step / irf7241pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7241pbf-hxy.step / irf7241pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 aecaa67cf5803661, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF