component
IRF7240TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7240TR
UMW · MOSFETs · SOP-8
IRF7240TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the -40 V P-channel MOSFET; the body diode is rated -2.5 A continuous (IS) per the source-drain ratings. |
| 2 | S | passive | Source terminal of the -40 V P-channel MOSFET; the body diode is rated -2.5 A continuous (IS) per the source-drain ratings. |
| 3 | S | passive | Source terminal of the -40 V P-channel MOSFET; the body diode is rated -2.5 A continuous (IS) per the source-drain ratings. |
| 4 | G | input | Gate terminal; the datasheet limits gate-to-source voltage VGS to ±20 V. |
| 5 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
| 6 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
| 7 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
| 8 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Continuous Drain Current | ID | -10.5 | A | VGS=-10V, TA=25°C | 1 | ||
| Continuous Drain Current | ID | -8.6 | A | VGS=-10V, TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -43 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | TA=70°C | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 50 | °C/W | Surface mounted on 1 in square Cu board, t ≤ 5 sec | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | ID=-250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250μA | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 16 | mΩ | VGS=-10V, ID=-10.5A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 27 | mΩ | VGS=-4.5V, ID=-8.4A | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Continuous Source Current (Body Diode) | IS | -2.5 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | -43 | A | 4 |
CAD (KiCad official)
- Symbol:
IRF7240TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7240tr-etched.step/irf7240tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7240tr.step/irf7240tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
fc600bc8c2d8a96c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7240TR
**UMW** · MOSFETs · SOP-8
IRF7240TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the -40 V P-channel MOSFET; the body diode is rated -2.5 A continuous (IS) per the source-drain ratings. |
| 2 | S | passive | Source terminal of the -40 V P-channel MOSFET; the body diode is rated -2.5 A continuous (IS) per the source-drain ratings. |
| 3 | S | passive | Source terminal of the -40 V P-channel MOSFET; the body diode is rated -2.5 A continuous (IS) per the source-drain ratings. |
| 4 | G | input | Gate terminal; the datasheet limits gate-to-source voltage VGS to ±20 V. |
| 5 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
| 6 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
| 7 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
| 8 | D | passive | Drain terminal; VDS is rated -40 V and continuous drain current is -10.5 A at VGS = -10 V, TA = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -40 | V | | 1 |
| Continuous Drain Current | ID | | | -10.5 | A | VGS=-10V, TA=25°C | 1 |
| Continuous Drain Current | ID | | | -8.6 | A | VGS=-10V, TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | -43 | A | | 1 |
| Power Dissipation | PD | | | 2.5 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 1.6 | W | TA=70°C | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | | 50 | °C/W | Surface mounted on 1 in square Cu board, t ≤ 5 sec | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | | | V | ID=-250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250μA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 16 | mΩ | VGS=-10V, ID=-10.5A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 27 | mΩ | VGS=-4.5V, ID=-8.4A | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | -100 | nA | VGS=-20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Continuous Source Current (Body Diode) | IS | | | -2.5 | A | | 4 |
| Pulsed Source Current (Body Diode) | ISM | | | -43 | A | | 4 |
## CAD (KiCad official)
- Symbol: `IRF7240TR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7240tr-etched.step` / `irf7240tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7240tr.step` / `irf7240tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879290158227456) (12 pp, sha256 `fc600bc8c2d8a96c`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7240tr-datasheet.pdf)