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IRF7205TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7205TR

UMW · MOSFETs · SOP-8

IRF7205TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the -30V P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE.
2 S passive SOURCE terminal of the -30V P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE.
3 S passive SOURCE terminal of the -30V P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE.
4 G input GATE terminal; the absolute maximum gate-to-source voltage is ±20 V (VGS).
5 D passive DRAIN terminal; the drain-to-source breakdown voltage V(BR)DSS is -30 V and the continuous drain current is -4.6 A at TA=25°C.
6 D passive DRAIN terminal; the drain-to-source breakdown voltage V(BR)DSS is -30 V and the continuous drain current is -4.6 A at TA=25°C.
7 D passive DRAIN terminal; the drain-to-source breakdown voltage V(BR)DSS is -30 V and the continuous drain current is -4.6 A at TA=25°C.
8 D passive DRAIN terminal; the drain-to-source breakdown voltage V(BR)DSS is -30 V and the continuous drain current is -4.6 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250μA 3
Forward Transconductance gFS 6.6 S VDS=-15V, ID=-4.6A 3
Static Drain-to-Source On-Resistance RDS(ON) 70 mΩ VGS=-10V, ID=-4.6A 3
Static Drain-to-Source On-Resistance RDS(ON) 100 mΩ VGS=-4.5V, ID=-2A 3
Drain-to-Source Leakage Current IDSS -1 µA VDS=-24V, VGS=0V 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Total Gate Charge Qg 27 40 nC ID=-4.6A, VDS=-15V, VGS=-10V 3
Continuous Source Current (Body Diode) IS -2.5 A 4
Pulsed Source Current (Body Diode) ISM -15 A 4
Diode Forward Voltage VSD -1.2 V TJ=25°C, IS=-1.25A, VGS=0V 4
Reverse Recovery Time trr 70 100 ns TJ=25°C, IF=-4.6A, dI/dt=100A/μs 4
Reverse Recovery Charge Qrr 100 180 nC TJ=25°C, IF=-4.6A, dI/dt=100A/μs 4
Continuous Drain Current ID -4.6 A VGS=10V, TA=25°C 1
Continuous Drain Current ID -3.7 A VGS=10V, TA=70°C 1
Pulsed Drain Current IDM -15 A 1
Power Dissipation PD 2.5 W TA=25°C 1
Linear Derating Factor 0.02 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt dv/dt -3 V/nS 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 50 °C/W Surface mounted on FR-4 board, t ≤ 10sec 2

CAD (KiCad official)

  • Symbol: IRF7205TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7205tr-etched.step / irf7205tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7205tr.step / irf7205tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 78719dd5aedfe380, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF