component
IRF7201TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7201TR
UMW · MOSFETs · SOP-8
IRF7201TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to source pins 2 and 3 in the package drawing. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 3 in the package drawing. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 2 in the package drawing. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum is ±20 V and the gate threshold is 1.0 V minimum. |
| 5 | D | passive | Drain of the MOSFET, tied to drain pins 6, 7 and 8; VDS maximum is 30 V. |
| 6 | D | passive | Drain of the MOSFET, tied to drain pins 5, 7 and 8; continuous drain current is 7.3 A at 25°C. |
| 7 | D | passive | Drain of the MOSFET, tied to drain pins 5, 6 and 8; pulsed drain current is 58 A. |
| 8 | D | passive | Drain of the MOSFET, tied to drain pins 5, 6 and 7; VDS maximum is 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Continuous Drain Current | ID | 7.3 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 5.8 | A | TC = 70°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 58 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TC = 25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | TC = 70°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Gate-to-Source Voltage Single Pulse | VGSM | 30 | V | tp<10µs | 1 | ||
| Single Pulse Avalanche Energy | EAS | 70 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 50 | °C/W | 1 | |||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 30 | mΩ | VGS = 10V, ID = 7.3A | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 50 | mΩ | VGS = 4.5V, ID = 3.7A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | V | VDS = VGS, ID = 250µA | 2 | ||
| Forward Transconductance | gfs | 5.8 | S | VDS = 15V, ID = 2.3A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | VDS = 24V, VGS = 0V | 2 | |||
| Drain-to-Source Leakage Current | IDSS | 25 | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | |||
| Gate-to-Source Forward Leakage | IGSS | -100 | VGS = -20V | 2 | |||
| Gate-to-Source Reverse Leakage | IGSS | 100 | VGS = 20V | 2 | |||
| Total Gate Charge | Qg | 19 | 28 | nC | ID = 4.6A | 2 | |
| Gate-to-Source Charge | Qgs | 2.3 | 3.5 | nC | VDS = 24V | 2 | |
| Gate-to-Drain (Miller) Charge | Qgd | 6.3 | 9.5 | nC | VGS = 10V, See Fig. 10 | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | TJ = 25°C, IS = 4.6A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 48 | 73 | ns | TJ = 25°C, IF = 4.6A | 2 | |
| Reverse Recovery Charge | Qrr | 73 | 110 | nC | di/dt = 100A/µs | 2 | |
| Continuous Source Current (Body Diode) | IS | 2.5 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 58 | A | 2 |
CAD (KiCad official)
- Symbol:
IRF7201TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7201tr-etched.step/irf7201tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7201tr.step/irf7201tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (7 pp, sha256
823800fca7a84cf9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7201TR
**UMW** · MOSFETs · SOP-8
IRF7201TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to source pins 2 and 3 in the package drawing. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 3 in the package drawing. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 2 in the package drawing. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum is ±20 V and the gate threshold is 1.0 V minimum. |
| 5 | D | passive | Drain of the MOSFET, tied to drain pins 6, 7 and 8; VDS maximum is 30 V. |
| 6 | D | passive | Drain of the MOSFET, tied to drain pins 5, 7 and 8; continuous drain current is 7.3 A at 25°C. |
| 7 | D | passive | Drain of the MOSFET, tied to drain pins 5, 6 and 8; pulsed drain current is 58 A. |
| 8 | D | passive | Drain of the MOSFET, tied to drain pins 5, 6 and 7; VDS maximum is 30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 7.3 | A | TC = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current | ID | | | 5.8 | A | TC = 70°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 58 | A | | 1 |
| Power Dissipation | PD | | | 2.5 | W | TC = 25°C | 1 |
| Power Dissipation | PD | | | 1.6 | W | TC = 70°C | 1 |
| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Gate-to-Source Voltage Single Pulse | VGSM | | | 30 | V | tp<10µs | 1 |
| Single Pulse Avalanche Energy | EAS | | | 70 | mJ | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | °C/W | | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | | 30 | mΩ | VGS = 10V, ID = 7.3A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | | 50 | mΩ | VGS = 4.5V, ID = 3.7A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | | V | VDS = VGS, ID = 250µA | 2 |
| Forward Transconductance | gfs | 5.8 | | | S | VDS = 15V, ID = 2.3A | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | | VDS = 24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 25 | | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | -100 | | VGS = -20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | 100 | | VGS = 20V | 2 |
| Total Gate Charge | Qg | | 19 | 28 | nC | ID = 4.6A | 2 |
| Gate-to-Source Charge | Qgs | | 2.3 | 3.5 | nC | VDS = 24V | 2 |
| Gate-to-Drain (Miller) Charge | Qgd | | 6.3 | 9.5 | nC | VGS = 10V, See Fig. 10 | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | TJ = 25°C, IS = 4.6A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 48 | 73 | ns | TJ = 25°C, IF = 4.6A | 2 |
| Reverse Recovery Charge | Qrr | | 73 | 110 | nC | di/dt = 100A/µs | 2 |
| Continuous Source Current (Body Diode) | IS | | | 2.5 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 58 | A | | 2 |
## CAD (KiCad official)
- Symbol: `IRF7201TR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7201tr-etched.step` / `irf7201tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7201tr.step` / `irf7201tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603362563866439680) (7 pp, sha256 `823800fca7a84cf9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7201tr-datasheet.pdf)