IRF7103PBF-HXY

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  "slug": "irf7103pbf-hxy",
  "title": "IRF7103PBF-HXY",
  "brief": "HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "IRF7103PBF-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590909212815929344",
    "parts": {
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      "lbr": "irf7103pbf-hxy.lbr"
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    "distributor_links": {
      "lcsc": "C22366502"
    },
    "distributor_check": {
      "checked_at": "2026-10-09T16:58:43Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
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      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of N-channel MOSFET 1; the absolute maximum drain-source voltage is 60 V and the gate-source voltage is ±20 V."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of N-channel MOSFET 1; the gate-source voltage is rated at ±20 V maximum, and the datasheet specifies RDS(ON) at VGS = 4.5 V and 10 V."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of N-channel MOSFET 2; the absolute maximum drain-source voltage is 60 V and the gate-source voltage is ±20 V."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of N-channel MOSFET 2; the gate-source voltage is rated at ±20 V maximum, and the datasheet specifies RDS(ON) at VGS = 4.5 V and 10 V."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 2; continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 2 (internally tied to pin 5); continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 1; continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 1 (internally tied to pin 7); continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The page 1 pin map text is flattened (top row '1 2 3 4' over labels 'S1 G1 S2 G2'; bottom row '8 7 5; The datasheet does not give per-pin ratings. The descriptions reuse the device-level absolute maximu; The datasheet does not give per-pin ratings for the source and gate pins. Their descriptions reuse t"
        ],
        "pages_sent": 7,
        "cost_usd": 0.0404,
        "at": "2026-10-09T16:56:46"
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      "datasheet": {
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        "pages": 7,
        "sha256": "e08a1e23678b4f4f",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "zmin_mm": 0,
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        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-09",
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        "sha256": "2fb96f35c8cee15ce5a6ce8f58cae193b57c141224e3747575040c705a537e7c",
        "checked": "2026-10-09",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "SOP-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    }
  },
  "variants": [],
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  "discovery_triggers": [
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  "discovery_pitch": "IRF7103PBF-HXY (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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