component
IRF7103PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7103PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7103PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1; the absolute maximum drain-source voltage is 60 V and the gate-source voltage is ±20 V. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; the gate-source voltage is rated at ±20 V maximum, and the datasheet specifies RDS(ON) at VGS = 4.5 V and 10 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2; the absolute maximum drain-source voltage is 60 V and the gate-source voltage is ±20 V. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; the gate-source voltage is rated at ±20 V maximum, and the datasheet specifies RDS(ON) at VGS = 4.5 V and 10 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2; continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2 (internally tied to pin 5); continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1; continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1 (internally tied to pin 7); continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
IRF7103PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7103pbf-hxy-etched.step/irf7103pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7103pbf-hxy.step/irf7103pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
e08a1e23678b4f4f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7103PBF-HXY
**HXY MOSFET** · MOSFETs · SOP-8
IRF7103PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1; the absolute maximum drain-source voltage is 60 V and the gate-source voltage is ±20 V. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; the gate-source voltage is rated at ±20 V maximum, and the datasheet specifies RDS(ON) at VGS = 4.5 V and 10 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2; the absolute maximum drain-source voltage is 60 V and the gate-source voltage is ±20 V. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; the gate-source voltage is rated at ±20 V maximum, and the datasheet specifies RDS(ON) at VGS = 4.5 V and 10 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2; continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2 (internally tied to pin 5); continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1; continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1 (internally tied to pin 7); continuous drain current is rated 6.5 A at TA = 25°C (5 A at TA = 70°C) with VGS = 4.5 V, and the pulsed drain current is 30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `IRF7103PBF-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7103pbf-hxy-etched.step` / `irf7103pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7103pbf-hxy.step` / `irf7103pbf-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590909212815929344) (7 pp, sha256 `e08a1e23678b4f4f`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7103pbf-hxy-datasheet.pdf)