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IRF7101PBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF7101PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; drain-source voltage limit is 20 V.
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage limit is ±10 V, with threshold 0.5 to 1.2 V at 250 µA.
3 S2 passive Source of N-channel MOSFET 2; drain-source voltage limit is 20 V.
4 G2 input Gate of N-channel MOSFET 2; gate-source voltage limit is ±10 V, with threshold 0.5 to 1.2 V at 250 µA.
5 D2 passive Drain of N-channel MOSFET 2, shorted to pins 5 and 6; continuous drain current is 4 A.
6 D2 passive Drain of N-channel MOSFET 2, shorted to pins 5 and 6; continuous drain current is 4 A.
7 D1 passive Drain of N-channel MOSFET 1, shorted to pins 7 and 8; continuous drain current is 4 A.
8 D1 passive Drain of N-channel MOSFET 1, shorted to pins 7 and 8; continuous drain current is 4 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 22 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±10V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 35 45 mΩ VGS=4.5V, ID=4A 2
Drain-Source On-State Resistance RDS(ON) 40 55 mΩ VGS=2.5V, ID=2A 2
Forward Transconductance gFS 20 S VDS=5V,ID=6A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=1.7A 2
Diode Forward Current IS 6 A 2
Drain-Source Voltage VDS 20 V TA=25℃ 1
Gate-Source Voltage VGS -10 10 V TA=25℃ 1
Drain Current-Continuous ID 4 A TA=25℃ 1
Drain Current-Continuous ID (100℃) 2.8 A TC=100℃ 1
Pulsed Drain Current IDM 25 A TA=25℃ 1
Maximum Power Dissipation PD 1.25 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 100 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Input Capacitance Clss 290 PF VDS=10V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 60 PF VDS=10V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 30 PF VDS=10V,VGS=0V,F=1.0MHz 2
Turn-on Delay Time td(on) 8 nS VDD=10V,ID=1A VGEN=4.5V,RG=6Ω 2
Turn-on Rise Time tr 9 nS VDD=10V,ID=1A VGEN=4.5V,RG=6Ω 2
Turn-Off Delay Time td(off) 15 nS VDD=10V,ID=1A VGEN=4.5V,RG=6Ω 2
Turn-Off Fall Time tf 4 nS VDD=10V,ID=1A VGEN=4.5V,RG=6Ω 2
Total Gate Charge Qg 10 nC VDS=10V,ID=3A, VGS=4.5V 2
Gate-Source Charge Qgs 1.5 nC VDS=10V,ID=3A, VGS=4.5V 2
Gate-Drain Charge Qgd 1.6 nC VDS=10V,ID=3A, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: IRF7101PBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7101pbf-hxy-etched.step / irf7101pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7101pbf-hxy.step / irf7101pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 9f69abefeebfcb25, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF