component
IRF7101PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IRF7101PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7101PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1; drain-source voltage limit is 20 V. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; gate-source voltage limit is ±10 V, with threshold 0.5 to 1.2 V at 250 µA. |
| 3 | S2 | passive | Source of N-channel MOSFET 2; drain-source voltage limit is 20 V. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; gate-source voltage limit is ±10 V, with threshold 0.5 to 1.2 V at 250 µA. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2, shorted to pins 5 and 6; continuous drain current is 4 A. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, shorted to pins 5 and 6; continuous drain current is 4 A. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1, shorted to pins 7 and 8; continuous drain current is 4 A. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, shorted to pins 7 and 8; continuous drain current is 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 35 | 45 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 40 | 55 | mΩ | VGS=2.5V, ID=2A | 2 | |
| Forward Transconductance | gFS | 20 | S | VDS=5V,ID=6A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1.7A | 2 | ||
| Diode Forward Current | IS | 6 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 4 | A | TA=25℃ | 1 | ||
| Drain Current-Continuous | ID (100℃) | 2.8 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Input Capacitance | Clss | 290 | PF | VDS=10V,VGS=0V,F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 60 | PF | VDS=10V,VGS=0V,F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | PF | VDS=10V,VGS=0V,F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 8 | nS | VDD=10V,ID=1A VGEN=4.5V,RG=6Ω | 2 | ||
| Turn-on Rise Time | tr | 9 | nS | VDD=10V,ID=1A VGEN=4.5V,RG=6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 15 | nS | VDD=10V,ID=1A VGEN=4.5V,RG=6Ω | 2 | ||
| Turn-Off Fall Time | tf | 4 | nS | VDD=10V,ID=1A VGEN=4.5V,RG=6Ω | 2 | ||
| Total Gate Charge | Qg | 10 | nC | VDS=10V,ID=3A, VGS=4.5V | 2 | ||
| Gate-Source Charge | Qgs | 1.5 | nC | VDS=10V,ID=3A, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 1.6 | nC | VDS=10V,ID=3A, VGS=4.5V | 2 |
CAD (KiCad official)
- Symbol:
IRF7101PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7101pbf-hxy-etched.step/irf7101pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7101pbf-hxy.step/irf7101pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
9f69abefeebfcb25, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).