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IRF654A-VB

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF654A-VB

VBsemi Elec · MOSFETs · TO-220AB

IRF654A-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±20 V, with VGS(th) of 2.0 to 4.0 V.
2 D passive Drain terminal (also connected to the tab); VDS rated 250 V, continuous drain current 14 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET; body diode continuous current rated 14 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 250 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 14 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 8.5 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 56 A 1
Linear Derating Factor 1 W/°C 1
Single Pulse Avalanche Energy EAS 550 mJ VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25, IAS = 14 A 1
Repetitive Avalanche Current IAR 14 A 1
Repetitive Avalanche Energy EAR 13 mJ 1
Maximum Power Dissipation PD 125 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 4.8 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak temperature) 300 °C for 10 s, 1.6 mm from case 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Drain-Source Breakdown Voltage VDS 250 V VGS = 0 V, ID = 250 μA 2
VDS Temperature Coefficient ΔVDS/TJ 0.34 V/°C Reference to 25 °C, ID = 1 mA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 250 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 200 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 6.7 S VDS = 50 V, ID = 8.4 A 2
Gate Input Resistance Rg 0.3 1.2 Ω f = 1 MHz, open drain 2
Continuous Source-Drain Diode Current IS 14 A 2
Pulsed Diode Forward Current ISM 56 A 2
Body Diode Voltage VSD 1.8 V TJ = 25 °C, IS = 14 A, VGS = 0 V 2
Input Capacitance Ciss 1300 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output Capacitance Coss 330 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 85 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Gate-Source Charge Qgs 11 nC VGS = 10 V, ID = 7.9 A, VDS = 200 V 2
Gate-Drain Charge Qgd 35 nC VGS = 10 V, ID = 7.9 A, VDS = 200 V 2
Total Gate Charge Qg 68 nC Qg max. from product summary 1
Rise Time tr 24 ns VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 8.7 Ω 2
Turn-Off Delay Time td(off) 53 ns VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 8.7 Ω 2
Fall Time tf 49 ns VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 8.7 Ω 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Body Diode Reverse Recovery Time trr 500 ns TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: IRF654A-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf654a-vb-etched.step / irf654a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf654a-vb.step / irf654a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 39a2ba3ea3374f48, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF