component
IRF640FP-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF640FP-VB
VBsemi Elec · MOSFETs · TO-220
IRF640FP-VB from VBsemi Elec, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with gate-source voltage limited to ±20 V and threshold VGS(th) of 2.0 to 4.0 V. |
| 2 | D | passive | Drain; connects to the 200 V drain-source rating, with continuous drain current of 8 A at TC = 25 °C and pulsed drain current up to 32 A. |
| 3 | S | passive | Source; current return path of the N-channel MOSFET, with body diode continuous current rated per the source-drain diode specification. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (hot) | IDSS | 250 | µA | VDS = 160 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 2.3 | S | VDS = 50 V, ID = 4.3 A | 2 | ||
| Total Gate Charge | Qg | 16 | nC | VGS = 10 V, ID = 9.2 A, VDS = 80 V | 2 | ||
| Gate-Source Charge | Qgs | 4.4 | nC | VGS = 10 V, ID = 9.2 A, VDS = 80 V | 2 | ||
| Gate-Drain Charge | Qgd | 7.7 | nC | VGS = 10 V, ID = 9.2 A, VDS = 80 V | 2 | ||
| Body Diode Voltage | VSD | 2.5 | V | TJ = 25 °C, IS = 7.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 130 | 260 | ns | TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.65 | 1.3 | µC | TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs | 2 | |
| Maximum Junction-to-Ambient | RthJA | 65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 4.1 | °C/W | 2 | |||
| Drain-Source Voltage | VDS | 200 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 8 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 15 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 32 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 36 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 1.0 mH, RG = 25 Ω, IAS = 7.2 A | 1 | ||
| Repetitive Avalanche Current | IAR | 7.2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 3.7 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 37 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5.5 | V/ns | ISD ≤ 9.2 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Peak Temperature | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Linear Derating Factor | 0.24 | W/°C | 1 | ||||
| Drain-Source On-State Resistance | RDS(on) | 0.2 | Ω | VGS = 10 V, ID = 4.3 A | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.13 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain to Sink Capacitance | C | 12 | pF | f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 8.8 | ns | VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω | 2 | ||
| Rise Time | tr | 30 | ns | VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 19 | ns | VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω | 2 | ||
| Fall Time | tf | 20 | ns | VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω | 2 |
CAD (KiCad official)
- Symbol:
IRF640FP-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irf640fp-vb-etched.step/irf640fp-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf640fp-vb.step/irf640fp-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
0e3c5e6f1c82106d, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).