component

IRF640

Public Made by Adom

by adom

GOODWORK MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF640

GOODWORK · MOSFETs · TO-220-3L

IRF640 from GOODWORK, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage VGS is rated at ±20 V.
2 D passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage V(BR)DSS is 200 V minimum and continuous drain current is 18 A at VGS = 10 V.
3 S passive Source terminal of the N-channel MOSFET, serving as the reference for the gate-source voltage VGS rated at ±20 V.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 200 V VGS=0V,ID=250µA 2
Gate-threshold voltage V (GS)th 2 4 V VDS=VGS, ID=250µA 2
Gate-body leakage lGSS -100 100 nA VDS=0V, VGS=±20V 2
Zero gate voltage drain current IDSS 25 µA VDS=200V, VGS=0V 2
Drain-source on-resistance RDS(Rn) 0.18 Ω VGS=10V, ID=11A 2
Forward transconductance gfs 6.7 S VDS=50V, ID=11A 2
Diode forward voltage VSD 2 V IS=18A, VGS=0V 2
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 18 A VGS @ 10 V 1
Power dissipation PD 2 W 1
Single pulse avalanche energy EAS 580 mJ note 1 1
Junction temperature TJ 150 ℃ 1
Storage temperature TSTG -55 150 ℃ 1
Thermal resistance from junction to ambient RθJA 62.5 ℃/W 1
Linear derating factor 1 W/℃ 1
Input capacitance Ciss 1300 pF VDS=25V, VGS=0V,f=1MHz 2
Output capacitance Coss 400 pF VDS=25V, VGS=0V,f=1MHz 2
Reverse transfer capacitance Crss 120 pF VDS=25V, VGS=0V,f=1MHz 2
Turn-on time td(Rn) 14 ns VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω 2
Rise time tr 51 ns VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω 2
Turn-off time td(off) 45 ns VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω 2
Fall time tf 36 ns VDD=100V,RD=5.4Ω, ID=18A, RG=9.1Ω 2

CAD (KiCad official)

  • Symbol: IRF640
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: irf640-etched.step / irf640-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf640.step / irf640.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (5 pp, sha256 318bd4b43b32b76c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF