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Contents

README

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IRF630NPBF

Infineon Technologies · MOSFETs · TO-220AB

IRF630NPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of N-channel power MOSFET; gate threshold voltage V_GS(th) 2.0-4.0 V (typ 2.5 V) at V_DS = V_GS, I_D = 250 µA; gate-to-source leakage ±100 nA max at V_GS = ±20 V.
2 D passive Drain terminal of N-channel power MOSFET; also electrically connected to mounting tab; V_DSS = 200 V max, I_D = 9.3 A continuous at T_C = 25 °C, I_D = 6.5 A at T_C = 100 °C.
3 S passive Source terminal of N-channel power MOSFET; R_DS(on) = 0.30 Ω max at V_GS = 10 V, I_D = 5.4 A; body diode forward voltage V_SD = 1.3 V typ at I_S = 9.3 A, V_GS = 0 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IRF630NPBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf630npbf-etched.step / irf630npbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf630npbf.step / irf630npbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 1b3a7635ef73977b, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-4-6 (vision), consensus claude-opus-4-7 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF