component

IRF630N

Public Made by Adom

by adom

Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF630N

Minos · MOSFETs · TO-220

IRF630N from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±30 V, with threshold voltage of 2.0 to 4.0 V at ID=250µA.
2 D passive Drain, also connected to the mounting tab; drain-to-source voltage rated 200 V and continuous drain current 9 A at TC=25°C.
3 S passive Source; body diode continuous source current is 9 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 200 V 2
Continuous Drain Current ID 9 A 2
Continuous Drain Current ID 5.5 A TC = 100 °C 2
Pulsed Drain Current IDM 36 A (Note1) 2
Gate-to-Source Voltage VGS -30 30 V 2
Single Pulse Avalanche Energy EAS 200 mJ L=20mH, VDS=50V, Start TJ=25℃ (Note2) 2
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=9A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ (Note3) 2
Power Dissipation PD 75 W TO-220, TO-251, TO-252 2
Derating Factor above 25°C 0.6 W/℃ TO-220, TO-251, TO-252 2
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 2
Maximum Temperature for Soldering TL 300 ℃ 2
Junction-to-Case Thermal Resistance RθJC 1.67 ℃/W TO-220, TO-251, TO-252 (No FullPAK) 2
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W TO-220, TO-251, TO-252 (No FullPAK) 2
Drain to Source Breakdown Voltage VDSS 200 V VGS=0V, ID=250µA 3
Drain to Source Leakage Current IDSS 1 µA VDS=200V, VGS=0V, Tj=25℃ 3
Drain to Source Leakage Current IDSS 100 µA VDS=160V, VGS=0V, Tj=125℃ 3
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+30V 3
Gate to Source Reverse Leakage IGSS(R) 100 nA VGS=-30V 3
Drain-to-Source On-Resistance RDS(ON) 0.26 0.32 Ω VGS=10V, ID=4A (Note4) 3
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA (Note4) 3
Continuous Source Current (Body Diode) IS 9 A TC=25 °C 4
Maximum Pulsed Current (Body Diode) ISM 36 A 4
Diode Forward Voltage VSD 1.2 V IS=9A, VGS=0V (Note4) 4

CAD (KiCad official)

  • Symbol: IRF630N
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irf630n-etched.step / irf630n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf630n.step / irf630n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (12 pp, sha256 c27090002323ff3d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF