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IRF5851TRPBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF5851TRPBF-VB

VBsemi Elec · MOSFETs · TSOP-6

IRF5851TRPBF-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET (20 V VDS, VGS ±20 V max).
2 S2 passive Source of the P-channel MOSFET (VDS -20 V, ID -3.4 A at TA = 25 °C).
3 G2 input Gate of the P-channel MOSFET (VGS ±20 V max).
4 D2 passive Drain of the P-channel MOSFET (VDS -20 V, pulsed ID -10 A).
5 S1 passive Source of the N-channel MOSFET (continuous source current IS 1.05 A).
6 D1 passive Drain of the N-channel MOSFET (VDS 20 V, ID 5.5 A at TA = 25 °C).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage, N-Channel VDS 20 V 1
Drain-Source Voltage, P-Channel VDS -20 V 1
Gate-Source Voltage, N-Channel VGS -20 20 V 1
Gate-Source Voltage, P-Channel VGS -20 20 V 1
Continuous Drain Current, P-Channel ID -3.4 A TA = 25 °C 1
Continuous Drain Current, P-Channel ID -2.3 A TA = 70 °C 1
Continuous Source Current (Diode Conduction), N-Channel IS 1.05 A 1
Continuous Source Current (Diode Conduction), P-Channel IS -1.05 A 1
Maximum Power Dissipation PD 1.15 W TA = 25 °C 1
Maximum Power Dissipation PD 0.73 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 93 110 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 130 150 °C/W Steady State 1
Maximum Junction-to-Lead RthJL 75 90 °C/W Steady State 1
Gate Threshold Voltage, N-Channel VGS(th) 0.5 1.5 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage, P-Channel VGS(th) -1.5 -0.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage, N-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Gate-Body Leakage, P-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current, N-Channel IDSS 1 µA VDS = 16 V, VGS = 0 2
Zero Gate Voltage Drain Current, P-Channel IDSS -1 µA VDS = -16 V, VGS = 0 2
Zero Gate Voltage Drain Current, N-Channel IDSS 5 µA VDS = 16 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current, P-Channel IDSS -5 µA VDS = -16 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current, N-Channel ID(on) 3.7 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current, P-Channel ID(on) -3 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance, N-Channel RDS(on) 0.022 Ω VGS = 10 V, ID = 2.5 A 2
Drain-Source On-State Resistance, P-Channel RDS(on) 0.055 Ω VGS = -10 V, ID = -1.8 A 2
Drain-Source On-State Resistance, N-Channel RDS(on) 0.03 Ω VGS = 4.5 V, ID = 2.0 A 2
Diode Forward Voltage, N-Channel VSD 0.81 1.1 V IS = 1.05 A, VGS = 0 V 2
Diode Forward Voltage, P-Channel VSD -1.1 -0.83 V IS = -1.05 A, VGS = 0 V 2
Total Gate Charge, N-Channel Qg 2.1 3.2 nC VDS = 15 V, VGS = 5 V, ID = 1.8 A 2
Total Gate Charge, P-Channel Qg 2.4 3.6 nC VDS = -15 V, VGS = -5 V, ID = -1.8 A 2
Turn-On Delay Time, N-Channel td(on) 7 11 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-On Delay Time, P-Channel td(on) 8 12 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Rise Time, N-Channel tr 9 14 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Rise Time, P-Channel tr 12 18 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Turn-Off Delay Time, N-Channel td(off) 13 20 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-Off Delay Time, P-Channel td(off) 12 18 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Fall Time, N-Channel tf 5 8 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Fall Time, P-Channel tf 7 11 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time, N-Channel trr 35 60 ns IF = 1.05 A, dI/dt = 100 A/µs 2
Source-Drain Reverse Recovery Time, P-Channel trr 30 60 ns IF = -1.05 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: IRF5851TRPBF-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: irf5851trpbf-vb-etched.step / irf5851trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf5851trpbf-vb.step / irf5851trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 54bd5b62289e38b2, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF