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Contents

README

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IRF5810TRPBF-VB

VBsemi Elec · MOSFETs · TSOP-6

IRF5810TRPBF-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of P-channel MOSFET 1, with gate-source voltage limited to ±12 V.
2 S2 passive Source of P-channel MOSFET 2, with drain-source voltage rated -20 V.
3 G2 input Gate of P-channel MOSFET 2, with gate-source voltage limited to ±12 V.
4 D2 passive Drain of P-channel MOSFET 2, with drain-source voltage rated -20 V and continuous drain current of -4.0 A at TC = 25 °C.
5 S1 passive Source of P-channel MOSFET 1, with drain-source voltage rated -20 V.
6 D1 passive Drain of P-channel MOSFET 1, with drain-source voltage rated -20 V and continuous drain current of -4.0 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Triode/MOS Tube/Transistor
Pins 6

CAD (KiCad official)

  • Symbol: IRF5810TRPBF-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: irf5810trpbf-vb-etched.step / irf5810trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf5810trpbf-vb.step / irf5810trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 f9fec151b4fcfd63, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF