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IRF5802TRPBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF5802TRPBF

Infineon Technologies · MOSFETs · TSOP-6

IRF5802TRPBF from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, internally tied to pins 2, 5 and 6; part is rated for VDSS 150V and 0.9A continuous drain current at TA = 25°C.
2 D passive Drain, internally tied to pins 1, 5 and 6; RDS(on) max 1.2 Ω at VGS = 10V.
3 G input Gate; gate-to-source voltage rating is ±30V.
4 S passive Source; also connects to the body diode anode, and the operating junction temperature range is -55 to +150°C.
5 D passive Drain, internally tied to pins 1, 2 and 6; pulsed drain current is 7.0A max.
6 D passive Drain, internally tied to pins 1, 2 and 5; power dissipation is 2.0W max at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current ID 0.9 A TA = 25°C, VGS @ 10V 1
Continuous Drain Current ID 0.7 A TA = 70°C, VGS @ 10V 1
Pulsed Drain Current IDM 7 A 1
Power Dissipation PD 2 W TA = 25°C 1
Linear Derating Factor 0.02 W/°C 1
Gate-to-Source Voltage VGS -30 30 V 1
Peak Diode Recovery dv/dt dv/dt 7.1 V/ns 1
Operating Junction Temperature TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case 1
Maximum Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W 1
Forward Transconductance gfs 0.55 S VDS = 50V, ID = 0.54A 2
Total Gate Charge Qg 4.5 6.8 nC ID = 0.54A 2
Gate-to-Source Charge Qgs 1 1.5 nC VDS = 120V 2
Gate-to-Drain (Miller) Charge Qgd 2.4 3.6 nC VGS = 10V 2
Single Pulse Avalanche Energy EAS 9.5 mJ 2
Avalanche Current IAR 0.9 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 0.54A, VGS = 0V 2
Reverse Recovery Time trr 46 69 ns TJ = 25°C, IF = 0.54A 2
Reverse Recovery Charge Qrr 55 83 nC di/dt = 100A/µs 2
Drain-to-Source Breakdown Voltage V(BR)DSS 150 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 1.2 Ω VGS = 10V, ID = 0.54A 2
Gate Threshold Voltage VGS(th) 3 5.5 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 25 µA VDS = 150V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 120V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 30V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -30V 2

CAD (KiCad official)

  • Symbol: IRF5802TRPBF
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: irf5802trpbf-etched.step / irf5802trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf5802trpbf.step / irf5802trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 761458e5bba438ea, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF