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IRF5801TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF5801TRPBF-VB
VBsemi Elec · MOSFETs · TSOP-6
IRF5801TRPBF-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
| 2 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
| 3 | G | input | Gate, with VGS limited to ±20 V and threshold voltage VGS(th) of 1.2 V min to 2.5 V max at ID = 250 µA. |
| 4 | S | passive | Source, with continuous source-drain diode current of 2.1 A at TC = 25 °C. |
| 5 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
| 6 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | 4 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | 2.8 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | 3.5 | A | TA = 25 °C (note b, c) | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | 2.4 | A | TA = 70 °C (note b, c) | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | t = 300 µs | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1.1 | A | TA = 25 °C (note b, c) | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.5 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 25 °C (note b, c) | 1 | ||
| Maximum Power Dissipation | PD | 1.2 | W | TA = 70 °C (note b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | 1 | |||||
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 200 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.16 | Ω | VGS = 10 V, ID = 3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.2 | Ω | VGS = 4.5 V, ID = 2 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 25 | A | 2 | |||
| Body Diode Voltage | VSD | 0.82 | 1.2 | V | IS = 4.0 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 13 | 20 | ns | IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 6 | 12 | nC | IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Total Gate Charge | Qg | 8.2 | 13 | nC | VDS = 100 V, VGS = 10 V, ID = 5.5 A | 2 | |
| Total Gate Charge | Qg | 6.2 | 10 | nC | VDS = 100 V, VGS = 4.5 V, ID = 5.5 A | 2 | |
| Gate Resistance | Rg | 2.5 | 12.6 | 25.2 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time (VGEN = 4.5 V) | td(on) | 61 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | ||
| Rise Time (VGEN = 4.5 V) | tr | 20 | 30 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time (VGEN = 4.5 V) | td(off) | 14 | 21 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time (VGEN = 4.5 V) | tf | 10 | 20 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time (VGEN = 10 V) | td(on) | 36 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 | ||
| Rise Time (VGEN = 10 V) | tr | 11 | 20 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time (VGEN = 10 V) | td(off) | 20 | 30 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time (VGEN = 10 V) | tf | 7 | 14 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 75 | 100 | °C/W | t ≤ 5 s, surface mounted (note b, d) | 1 | |
| Thermal Resistance, Junction-to-Ambient (steady state) | RthJA | 166 | °C/W | Steady state (note d) | 1 | ||
| Thermal Resistance, Junction-to-Foot (Drain), steady state | RthJF | 40 | 50 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage Temperature Coefficient | VDS/TJ | 30 | mV/°C | ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage Temperature Coefficient | VGS(th)/TJ | -4.8 | 2 | ||||
| Forward Transconductance | gfs | 24 | S | VDS = 15 V, ID = 3 A | 2 | ||
| Input Capacitance | Ciss | 650 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 200 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 82 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 1.6 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 1.8 | nC | 2 | |||
| Reverse Recovery Fall Time | ta | 8 | ns | 2 | |||
| Reverse Recovery Rise Time | tb | 5 | ns | 2 |
CAD (KiCad official)
- Symbol:
IRF5801TRPBF-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
irf5801trpbf-vb-etched.step/irf5801trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf5801trpbf-vb.step/irf5801trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
48ba5d360a083281, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF5801TRPBF-VB
**VBsemi Elec** · MOSFETs · TSOP-6
IRF5801TRPBF-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
| 2 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
| 3 | G | input | Gate, with VGS limited to ±20 V and threshold voltage VGS(th) of 1.2 V min to 2.5 V max at ID = 250 µA. |
| 4 | S | passive | Source, with continuous source-drain diode current of 2.1 A at TC = 25 °C. |
| 5 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
| 6 | D | passive | Drain, connected internally with the other drain pins; VDS rated 200 V and continuous ID up to 4 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | 4 | A | TC = 25 °C | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | 2.8 | A | TC = 70 °C | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | 3.5 | A | TA = 25 °C (note b, c) | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | 2.4 | A | TA = 70 °C (note b, c) | 1 |
| Pulsed Drain Current | IDM | | | 25 | A | t = 300 µs | 1 |
| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 1.1 | A | TA = 25 °C (note b, c) | 1 |
| Maximum Power Dissipation | PD | | | 5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.5 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TA = 25 °C (note b, c) | 1 |
| Maximum Power Dissipation | PD | | | 1.2 | W | TA = 70 °C (note b, c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 260 | | | 1 |
| Drain-Source Breakdown Voltage | VDS | 200 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 200 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | 20 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.16 | Ω | VGS = 10 V, ID = 3 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.2 | Ω | VGS = 4.5 V, ID = 2 A | 2 |
| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 25 | A | | 2 |
| Body Diode Voltage | VSD | | 0.82 | 1.2 | V | IS = 4.0 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 13 | 20 | ns | IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 6 | 12 | nC | IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Total Gate Charge | Qg | | 8.2 | 13 | nC | VDS = 100 V, VGS = 10 V, ID = 5.5 A | 2 |
| Total Gate Charge | Qg | | 6.2 | 10 | nC | VDS = 100 V, VGS = 4.5 V, ID = 5.5 A | 2 |
| Gate Resistance | Rg | 2.5 | 12.6 | 25.2 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time (VGEN = 4.5 V) | td(on) | | 61 | | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time (VGEN = 4.5 V) | tr | | 20 | 30 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 4.5 V) | td(off) | | 14 | 21 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time (VGEN = 4.5 V) | tf | | 10 | 20 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time (VGEN = 10 V) | td(on) | | 36 | | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time (VGEN = 10 V) | tr | | 11 | 20 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 10 V) | td(off) | | 20 | 30 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time (VGEN = 10 V) | tf | | 7 | 14 | ns | VDD = 100 V, RL = 3.4 Ω, ID ≈ 4.0 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | 75 | 100 | °C/W | t ≤ 5 s, surface mounted (note b, d) | 1 |
| Thermal Resistance, Junction-to-Ambient (steady state) | RthJA | | | 166 | °C/W | Steady state (note d) | 1 |
| Thermal Resistance, Junction-to-Foot (Drain), steady state | RthJF | | 40 | 50 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage Temperature Coefficient | VDS/TJ | | 30 | | mV/°C | ID = 250 µA | 2 |
| Gate-Source Threshold Voltage Temperature Coefficient | VGS(th)/TJ | | -4.8 | | | | 2 |
| Forward Transconductance | gfs | | 24 | | S | VDS = 15 V, ID = 3 A | 2 |
| Input Capacitance | Ciss | | 650 | | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 200 | | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 82 | | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 1.6 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 1.8 | | nC | | 2 |
| Reverse Recovery Fall Time | ta | | 8 | | ns | | 2 |
| Reverse Recovery Rise Time | tb | | 5 | | ns | | 2 |
## CAD (KiCad official)
- Symbol: `IRF5801TRPBF-VB`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `irf5801trpbf-vb-etched.step` / `irf5801trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf5801trpbf-vb.step` / `irf5801trpbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602995308322439168) (9 pp, sha256 `48ba5d360a083281`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf5801trpbf-vb-datasheet.pdf)