component
IRF530NPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462463464465466467468469470471472473474475476477478479480481482483484485486487488489490491492493494495496497498499500501502503504505506507508509510511512513514515516517518519520521522523
{
"schema_version": 1,
"type": "component",
"slug": "irf530npbf-vb",
"title": "IRF530NPBF-VB",
"brief": "VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"irf530npbf-vb",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "IRF530NPBF-VB",
"manufacturer": "VBsemi Elec",
"package": "TO-220AB",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/1d5cb96e7267c4a1984ea125417420ef.pdf",
"parts": {
"symbol": "irf530npbf-vb.kicad_sym",
"footprint": "irf530npbf-vb.kicad_mod",
"model_3d": "irf530npbf-vb-hero.glb",
"model_3d_plain": "irf530npbf-vb-etched.glb",
"model_3d_step": "irf530npbf-vb-etched.step",
"model_3d_step_plain": "irf530npbf-vb.step",
"lbr": "irf530npbf-vb.lbr"
},
"distributor_links": {
"lcsc": "C3040223"
},
"distributor_check": {
"checked_at": "2026-10-27T00:54:32Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20 V."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain terminal; drain-source voltage rating is 100 V and continuous drain current is 18 A at TC = 25 °C."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source terminal of the N-channel MOSFET."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: Pin order G, D, S is taken from the 'GDS Top View' label on page 1 and the package drawing shows pin"
],
"pages_sent": 7,
"cost_usd": 0.0552,
"at": "2026-10-27T00:54:00"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/1d5cb96e7267c4a1984ea125417420ef.pdf",
"pages": 7,
"sha256": "2f7ed35a17a37272",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "irf530npbf-vb.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.25,
4.455,
28.525
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.932,
"footprint_binding": "identity",
"sha256": "7cb065d935df5771f0ba6e48ddd180863a121af76483dad7f18e667a7b68204a",
"checked": "2026-10-27",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "irf530npbf-vb-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.25,
4.455,
28.525
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.932,
"footprint_binding": "identity",
"sha256": "f08ba7c4f3fb3e0a450a1eb7e5fe35adc92792e53fbdab8fb554f6aad2eec306",
"checked": "2026-10-27",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "VBsemi Elec",
"Package": "TO-220AB",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "2f7ed35a17a372728ac46ad1edbf3b6a756d8bc7277057f860b4941c4653523f",
"rows": [
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 100,
"typ": null,
"max": null,
"conditions": "VDS = 0 V, ID = 250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Body Leakage",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VDS = 0 V, VGS = ± 20 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS = 100 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 50,
"conditions": "VDS = 100 V, VGS = 0 V, TJ = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 250,
"conditions": "VDS = 100 V, VGS = 0 V, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-State Drain Current",
"symbol": "ID(on)",
"kind": "electrical",
"unit": "A",
"min": 120,
"typ": null,
"max": null,
"conditions": "VDS ≥ 5 V, VGS = 10 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "rDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.127,
"conditions": "VGS = 10 V, ID = 20 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "rDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.13,
"conditions": "VGS = 10 V, ID = 20 A, TJ = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "rDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.17,
"conditions": "VGS = 10 V, ID = 20 A, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Resistance",
"symbol": "Rg",
"kind": "electrical",
"unit": "Ω",
"min": 0.5,
"typ": 1.7,
"max": 3.3,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Continuous Source Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 18,
"conditions": "TC = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Pulsed Source Current",
"symbol": "ISM",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 68,
"conditions": "TC = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 1,
"max": 1.5,
"conditions": "IF = 65 A, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Reverse Recovery Time",
"symbol": "trr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 130,
"max": 200,
"conditions": "IF = 50 A, di/dt = 100 A/µs",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Peak Reverse Recovery Current",
"symbol": "IRM(REC)",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": 8,
"max": 12,
"conditions": "IF = 50 A, di/dt = 100 A/µs",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Reverse Recovery Charge",
"symbol": "Qrr",
"kind": "electrical",
"unit": "µC",
"min": null,
"typ": 0.52,
"max": 1.2,
"conditions": "IF = 50 A, di/dt = 100 A/µs",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 100,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 18,
"conditions": "TJ = 175 °C, TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 15,
"conditions": "TJ = 175 °C, TC = 125 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 68,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche Current",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 18,
"conditions": "L = 0.1 mH",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single Pulse Avalanche Energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 200,
"conditions": "L = 0.1 mH",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 3.75,
"conditions": "TA = 25 °C, mounted on 1\" square PCB",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Junction-to-Ambient Thermal Resistance",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 40,
"conditions": "PCB Mount (TO-263)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Junction-to-Case (Drain) Thermal Resistance",
"symbol": "RthJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 0.4,
"conditions": "",
"source_page": 1,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"irf530npbf-vb"
],
"discovery_pitch": "IRF530NPBF-VB (VBsemi Elec) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"irf530npbf-vb.kicad_sym",
"irf530npbf-vb.kicad_mod",
"irf530npbf-vb.glb",
"irf530npbf-vb.step",
"irf530npbf-vb.lbr",
"docs/hero.png",
"docs/irf530npbf-vb-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"irf530npbf-vb-hero.glb",
"irf530npbf-vb-hero.overlay.json",
"irf530npbf-vb-etched.glb"
],
"visibility": {
"public": true
}
}