# IRF510PBF

**Vishay Intertech** · MOSFETs · TO-220AB

IRF510PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V maximum, with a gate-source threshold of 2.0 V to 4.0 V at VDS = VGS and ID = 250 µA. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 100 V and continuous drain current at VGS = 10 V is 5.6 A at TC = 25 °C (4.0 A at TC = 100 °C). |
| 3 | S | passive | Source of the N-channel MOSFET; the integral body diode continuous source-drain current is rated at 5.6 A, with pulsed diode forward current of 20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 5.6 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 75 | mJ |  | 1 |
| Repetitive Avalanche Current | IAR |  |  | 5.6 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 4.3 | mJ |  | 1 |
| Maximum Power Dissipation | PD |  |  | 43 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 5.5 | V/ns |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Soldering Recommendations (Peak temperature) |  |  |  | 300 | °C | for 10 s | 1 |
| Mounting Torque (6-32 or M3 screw) |  |  |  | 10 | lbf · in |  | 1 |
| Mounting Torque (6-32 or M3 screw) |  |  |  | 1.1 | N · m |  | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 25 | μA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | μA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.54 | Ω | VGS = 10 V, ID = 3.4 A | 2 |
| Forward Transconductance | gfs | 1.3 |  |  | S | VDS = 50 V, ID = 3.4 A | 2 |
| Total Gate Charge | Qg |  |  | 8.3 | nC | VGS = 10 V, ID = 5.6 A, VDS = 80 V | 2 |
| Gate-Source Charge | Qgs |  |  | 2.3 | nC |  | 2 |
| Gate-Drain Charge | Qgd |  |  | 3.8 | nC |  | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 5.6 | A |  | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | 2.5 | V | TJ = 25 °C, IS = 5.6 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 100 | 200 | ns | TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 0.44 | 0.88 | μC | TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs | 2 |
| Maximum Junction-to-Ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 3.5 | °C/W |  | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| Linear Derating Factor |  |  | 0.29 |  | W/°C |  | 1 |

## CAD (KiCad official)

- Symbol: `IRF510PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irf510pbf-etched.step` / `irf510pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf510pbf.step` / `irf510pbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896846278504448) (8 pp, sha256 `3db5276a09524c82`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf510pbf-datasheet.pdf)