component
IRF4905
Public Made by Adomby adom
UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF4905
UMW · MOSFETs · TO-220
IRF4905 from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet rates the gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal; rated VDS = -55 V with continuous drain current ID = -74 A at TC = 25°C. |
| 3 | S | passive | SOURCE terminal; continuous body-diode source current IS = -74 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | -74 | A | VGS=-10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | -52 | A | VGS=-10V, TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -260 | A | 1 | |||
| Power Dissipation | PD | 200 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 1.3 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 930 | mJ | 1 | |||
| Avalanche Current | IAR | -38 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 20 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | -5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds, 1.6mm from case | 1 | |||
| Mounting Torque, 6-32 or M3 screw | 10 | lbf•in | 6-32 or M3 screw | 1 | |||
| Junction-to-Case | RθJC | 0.75 | °C/W | 2 | |||
| Junction-to-Ambient | RθJA | 62 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RθCS | 0.5 | °C/W | 2 | |||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -55 | V | ID=-250µA, VGS=0V | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 18 | 20 | mΩ | VGS=-10V, ID=-38A | 3 | |
| Gate Threshold Voltage | VGS(th) | -2 | -4 | V | VDS=VGS, ID=-250µA | 3 | |
| Forward Transconductance | gFS | 21 | S | VDS=-25V, ID=-38A | 3 | ||
| Drain-to-Source Leakage Current | IDSS | -25 | µA | VDS=-55V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | -250 | µA | VDS=-44V, VGS=0V, TJ=150°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Total Gate Charge | Qg | 180 | nC | ID=-38A, VDS=-44V, VGS=-10V | 3 | ||
| Continuous Source Current (Body Diode) | IS | -74 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | -260 | A | 4 | |||
| Diode Forward Voltage | VSD | -1.6 | V | TJ=25°C, IS=-38A, VGS=0V | 4 | ||
| Reverse Recovery Time | trr | 130 | ns | TJ=25°C, IF=-38A, dI/dt=-100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 350 | nC | TJ=25°C, IF=-38A, dI/dt=-100A/µs | 4 |
CAD (KiCad official)
- Symbol:
IRF4905 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irf4905-etched.step/irf4905-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf4905.step/irf4905.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
496c55415f0fe16c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).